Part Details for FDC658AP by Fairchild Semiconductor Corporation
Overview of FDC658AP by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDC658AP
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | -30 V, -4 A, 50 MILLI OHM SINGLE P-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ | |
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Win Source Electronics | MOSFET P-CH 30V 4A SSOT6 | 360221 |
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$0.2450 / $0.3680 | Buy Now |
Part Details for FDC658AP
FDC658AP CAD Models
FDC658AP Part Data Attributes
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FDC658AP
Fairchild Semiconductor Corporation
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Datasheet
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FDC658AP
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPERSOT-6
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SSOT | |
| Package Description | ROHS COMPLIANT, SUPERSOT-6 | |
| Pin Count | 6 | |
| Manufacturer Package Code | 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDC658AP
This table gives cross-reference parts and alternative options found for FDC658AP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC658AP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI6926ADQ-T1-GE3 | TRANSISTOR 4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal | Vishay Siliconix | FDC658AP vs SI6926ADQ-T1-GE3 |
| 2N5904 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, | Solitron Devices Inc | FDC658AP vs 2N5904 |
| NDS8926/L86Z | 5500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | FDC658AP vs NDS8926/L86Z |
| U423 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, | Calogic Inc | FDC658AP vs U423 |
| FDS6930B | Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDC658AP vs FDS6930B |
| FDC634PL99Z | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC658AP vs FDC634PL99Z |
| FDC634PS62Z | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC658AP vs FDC634PS62Z |
| RSQ035P03TR | Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN | ROHM Semiconductor | FDC658AP vs RSQ035P03TR |
| 2N5906 | TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-78, FET General Purpose Small Signal | National Semiconductor Corporation | FDC658AP vs 2N5906 |
| FDC637BNZ | N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ, 3000-REEL | onsemi | FDC658AP vs FDC637BNZ |