Part Details for FDB86566_F085 by onsemi
Overview of FDB86566_F085 by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDB86566_F085
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
FDB86566_F085
|
Avnet Americas | Transistor MOSFET N-CH 60V 110A 3-Pin TO-263 T/R - Tape and Reel (Alt: FDB86566_F085) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel | 0 |
|
RFQ |
Part Details for FDB86566_F085
FDB86566_F085 CAD Models
FDB86566_F085 Part Data Attributes:
|
|
FDB86566_F085
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDB86566_F085
onsemi
60 V N-Channel PowerTrench® MOSFET, TO-263 2L (D2PAK), 800-TAPE REEL
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Manufacturer Package Code | TO263A02 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 77 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 193 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 110 A | |
| Drain-source On Resistance-Max | 0.0027 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 176 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 64 ns | |
| Turn-on Time-Max (ton) | 115 ns |
Alternate Parts for FDB86566_F085
This table gives cross-reference parts and alternative options found for FDB86566_F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB86566_F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDB86566-F085 | N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified | onsemi | FDB86566_F085 vs FDB86566-F085 |