Datasheets
FDB107 by:

Bridge Rectifier Diode, 1A, 1000V V(RRM),

Part Details for FDB107 by Galaxy Microelectronics

Overview of FDB107 by Galaxy Microelectronics

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Applications Industrial Automation

Part Details for FDB107

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FDB107 Part Data Attributes

FDB107 Galaxy Microelectronics
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FDB107 Galaxy Microelectronics Bridge Rectifier Diode, 1A, 1000V V(RRM),
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
Breakdown Voltage-Min 1000 V
Configuration BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
Non-rep Pk Forward Current-Max 30 A
Number of Elements 4
Number of Phases 1
Operating Temperature-Max 125 °C
Output Current-Max 1 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 1000 V
Surface Mount NO

Alternate Parts for FDB107

This table gives cross-reference parts and alternative options found for FDB107. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB107, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DBLS107GRDG Bridge Rectifier Diode, 1A, 1000V V(RRM), Taiwan Semiconductor FDB107 vs DBLS107GRDG
DBLS107GC1G Bridge Rectifier Diode, 1A, 1000V V(RRM), Taiwan Semiconductor FDB107 vs DBLS107GC1G
W10G Bridge Rectifier Diode, 1A, 1000V V(RRM), Galaxy Microelectronics FDB107 vs W10G
DBLS107GC1 Bridge Rectifier Diode, 1A, 1000V V(RRM), Taiwan Semiconductor FDB107 vs DBLS107GC1
FDB107S Bridge Rectifier Diode, 1A, 1000V V(RRM), Galaxy Microelectronics FDB107 vs FDB107S

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