Part Details for FCP190N60 by onsemi
Overview of FCP190N60 by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FCP190N60
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
94T9922
|
Newark | Sf2 600V 190Mohm F To220/Tube |Onsemi FCP190N60 Min Qty: 150 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.3300 / $1.6300 | Buy Now |
DISTI #
FCP190N60
|
Avnet Americas | Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: FCP190N60) RoHS: Compliant Min Qty: 511 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 944 Partner Stock |
|
$1.2152 / $1.4504 | Buy Now |
|
Rochester Electronics | FCP190N60 - Power Field-Effect Transistor, 20.2A, 600V, 0.199ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 1175 |
|
$1.3300 / $1.5600 | Buy Now |
|
Ameya Holding Limited | MOSFET N-CH 600V TO220-3 | 32800 |
|
RFQ | |
|
Flip Electronics | Stock, ship today | 944 |
|
$0.9800 | RFQ |
Part Details for FCP190N60
FCP190N60 CAD Models
FCP190N60 Part Data Attributes
|
FCP190N60
onsemi
Buy Now
Datasheet
|
Compare Parts:
FCP190N60
onsemi
Power MOSFET, N-Channel, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220, 800-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-220, 3 PIN | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 2 Days | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 400 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20.2 A | |
Drain-source On Resistance-Max | 0.199 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 208 W | |
Pulsed Drain Current-Max (IDM) | 60.6 A | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |