Datasheets
EMS256K8AMO2-35M by:

SRAM Module, 256KX8, 35ns, CMOS, CDMA32

Part Details for EMS256K8AMO2-35M by ELMOS SEMICONDUCTOR AG

Overview of EMS256K8AMO2-35M by ELMOS SEMICONDUCTOR AG

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Available Datasheets

Part # Manufacturer Description Datasheet
LPS6235-123MLC Coilcraft Inc General Purpose Inductor, 12uH, 20%, 1 Element, Ferrite-Core, SMD, 6262-35M, CHIP, 6262-35M, ROHS COMPLIANT
LPS6235-183MLC Coilcraft Inc General Purpose Inductor, 18uH, 20%, 1 Element, Ferrite-Core, SMD, 6262-35M, CHIP, 6262-35M, ROHS COMPLIANT
LPS6235-334MLC Coilcraft Inc General Purpose Inductor, 330uH, 20%, 1 Element, Ferrite-Core, SMD, 6262-35M, CHIP, 6262-35M, ROHS COMPLIANT

Part Details for EMS256K8AMO2-35M

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EMS256K8AMO2-35M Part Data Attributes

EMS256K8AMO2-35M ELMOS SEMICONDUCTOR AG
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EMS256K8AMO2-35M ELMOS SEMICONDUCTOR AG SRAM Module, 256KX8, 35ns, CMOS, CDMA32
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ELMO SEMICONDUCTOR CORP
Package Description DIP, DIP32,.6
Reach Compliance Code unknown
ECCN Code 3A001.A.2.C
HTS Code 8542.32.00.41
Access Time-Max 35 ns
I/O Type COMMON
JESD-30 Code R-CDMA-T32
JESD-609 Code e0
Memory Density 2097152 bit
Memory IC Type SRAM MODULE
Memory Width 8
Number of Functions 1
Number of Terminals 32
Number of Words 262144 words
Number of Words Code 256000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Organization 256KX8
Output Characteristics 3-STATE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Code DIP
Package Equivalence Code DIP32,.6
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Screening Level MIL-STD-883 Class B (Modified)
Standby Current-Max 0.0005 A
Standby Voltage-Min 4.5 V
Supply Current-Max 0.34 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL

Alternate Parts for EMS256K8AMO2-35M

This table gives cross-reference parts and alternative options found for EMS256K8AMO2-35M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EMS256K8AMO2-35M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
WS256K8-70CI SRAM Module, 256KX8, 70ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 White Electronic Designs Corp EMS256K8AMO2-35M vs WS256K8-70CI
5962-9315703HXA Multi-Port SRAM Module, 256KX8, 85ns, CMOS, CDIP32, White Electronic Designs Corp EMS256K8AMO2-35M vs 5962-9315703HXA
EDI8M8257C85P6B SRAM Module, 256KX8, 85ns, CMOS, Electronic Designs Inc EMS256K8AMO2-35M vs EDI8M8257C85P6B
MSM8256SLI-45 SRAM Module, 256KX8, 45ns, CMOS, CDIP32 Mosaic Semiconductor Inc EMS256K8AMO2-35M vs MSM8256SLI-45
EDI8M8257P45N6M SRAM Module, 256KX8, 45ns, CMOS, Electronic Designs Inc EMS256K8AMO2-35M vs EDI8M8257P45N6M
EDI88257CA45CB Standard SRAM, 256KX8, 45ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 White Microelectronics EMS256K8AMO2-35M vs EDI88257CA45CB
EDI88257LPA45CI Standard SRAM, 256KX8, 45ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 White Microelectronics EMS256K8AMO2-35M vs EDI88257LPA45CI
MH25708TNA-12H SRAM Module, 256KX8, 120ns, CMOS Mitsubishi Electric EMS256K8AMO2-35M vs MH25708TNA-12H
EDI88257CA55CC Standard SRAM, 256KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 White Microelectronics EMS256K8AMO2-35M vs EDI88257CA55CC
MSM4512SXM-25 SRAM Module, 256KX8, 25ns, CMOS, CDIP32 Mosaic Semiconductor Inc EMS256K8AMO2-35M vs MSM4512SXM-25

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