Datasheets
BUZ344 by:

Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA

Part Details for BUZ344 by Infineon Technologies AG

Overview of BUZ344 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for BUZ344

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BUZ344 Part Data Attributes:

BUZ344 Infineon Technologies AG
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BUZ344 Infineon Technologies AG Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 400 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-218AA
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for BUZ344

This table gives cross-reference parts and alternative options found for BUZ344. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ344, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFG40N10 Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor BUZ344 vs RFG40N10
IRFP150N Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN International Rectifier BUZ344 vs IRFP150N
MTW45N10E 45A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN onsemi BUZ344 vs MTW45N10E
SGSP471 30A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics BUZ344 vs SGSP471
IRFP150N Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN Infineon Technologies AG BUZ344 vs IRFP150N
RFG40N10 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation BUZ344 vs RFG40N10
RFG40N10 Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Fairchild Semiconductor Corporation BUZ344 vs RFG40N10
STW50N10 50A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STMicroelectronics BUZ344 vs STW50N10
MTH25N08 Power Field-Effect Transistor, 25A I(D), 80V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC Motorola Semiconductor Products BUZ344 vs MTH25N08
SGSP472 35A, 80V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics BUZ344 vs SGSP472
Part Number Description Manufacturer Compare
STW50N10 50A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STMicroelectronics BUZ344 vs STW50N10
RFG40N10 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC BUZ344 vs RFG40N10
IRFP150N Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN International Rectifier BUZ344 vs IRFP150N
RFG40N10 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation BUZ344 vs RFG40N10
SGSP471 30A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics BUZ344 vs SGSP471
RFG40N10 Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor BUZ344 vs RFG40N10
IRFP150NPBF Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier BUZ344 vs IRFP150NPBF
IRF1310NHR Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier BUZ344 vs IRF1310NHR
MTH40N08 40A, 80V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC Motorola Mobility LLC BUZ344 vs MTH40N08
SMW60N10 Power Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Vishay Siliconix BUZ344 vs SMW60N10

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