Part Details for BUZ344 by Infineon Technologies AG
Overview of BUZ344 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for BUZ344
BUZ344 CAD Models
BUZ344 Part Data Attributes:
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BUZ344
Infineon Technologies AG
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Datasheet
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BUZ344
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 400 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-218AA | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 170 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for BUZ344
This table gives cross-reference parts and alternative options found for BUZ344. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ344, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RFG40N10 | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Harris Semiconductor | BUZ344 vs RFG40N10 |
IRFP150N | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | International Rectifier | BUZ344 vs IRFP150N |
MTW45N10E | 45A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN | onsemi | BUZ344 vs MTW45N10E |
SGSP471 | 30A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | BUZ344 vs SGSP471 |
IRFP150N | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | Infineon Technologies AG | BUZ344 vs IRFP150N |
RFG40N10 | 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | BUZ344 vs RFG40N10 |
RFG40N10 | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | BUZ344 vs RFG40N10 |
STW50N10 | 50A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | BUZ344 vs STW50N10 |
MTH25N08 | Power Field-Effect Transistor, 25A I(D), 80V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | Motorola Semiconductor Products | BUZ344 vs MTH25N08 |
SGSP472 | 35A, 80V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | BUZ344 vs SGSP472 |