Part Details for MTW45N10E by onsemi
Overview of MTW45N10E by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Part Details for MTW45N10E
MTW45N10E CAD Models
MTW45N10E Part Data Attributes:
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MTW45N10E
onsemi
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Datasheet
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MTW45N10E
onsemi
45A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Part Package Code | TO-247AE | |
Package Description | CASE 340K-01, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | CASE 340K-01 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 810 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 45 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AE | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 180 W | |
Pulsed Drain Current-Max (IDM) | 135 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for MTW45N10E
This table gives cross-reference parts and alternative options found for MTW45N10E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTW45N10E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RFG40N10 | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Harris Semiconductor | MTW45N10E vs RFG40N10 |
IRFP150N | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | International Rectifier | MTW45N10E vs IRFP150N |
SGSP471 | 30A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | MTW45N10E vs SGSP471 |
IRFP150N | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | Infineon Technologies AG | MTW45N10E vs IRFP150N |
RFG40N10 | 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | MTW45N10E vs RFG40N10 |
RFG40N10 | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | MTW45N10E vs RFG40N10 |
STW50N10 | 50A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | MTW45N10E vs STW50N10 |
MTH25N08 | Power Field-Effect Transistor, 25A I(D), 80V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | Motorola Semiconductor Products | MTW45N10E vs MTH25N08 |
SGSP472 | 35A, 80V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | MTW45N10E vs SGSP472 |
SMW60N10 | Power Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Vishay Siliconix | MTW45N10E vs SMW60N10 |