Part Details for BUZ215 by Infineon Technologies AG
Overview of BUZ215 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for BUZ215
BUZ215 CAD Models
BUZ215 Part Data Attributes
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BUZ215
Infineon Technologies AG
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Datasheet
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BUZ215
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 5 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Surface Mount | NO |
Alternate Parts for BUZ215
This table gives cross-reference parts and alternative options found for BUZ215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF830 | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | BUZ215 vs IRF830 |
| IRF830PBF | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | BUZ215 vs IRF830PBF |
| BUZ41A | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Siemens | BUZ215 vs BUZ41A |
| BUZ41A | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | BUZ215 vs BUZ41A |
| IRF830 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-220AB | National Semiconductor Corporation | BUZ215 vs IRF830 |
| IRF830 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | BUZ215 vs IRF830 |
| IRF833 | Power Field-Effect Transistor, 4A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | BUZ215 vs IRF833 |
| IRF830 | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | BUZ215 vs IRF830 |