BUZ215 vs IRF830 feature comparison

BUZ215 Infineon Technologies AG

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IRF830 Intersil Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG INTERSIL CORP
Package Description ,
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 5 A 4.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 75 W 75 W
Surface Mount NO NO
Base Number Matches 4 2
Rohs Code No
HTS Code 8541.29.00.95
Case Connection DRAIN
DS Breakdown Voltage-Min 500 V
Drain-source On Resistance-Max 1.5 Ω
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 76 ns
Turn-on Time-Max (ton) 40 ns

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