Part Details for BUK9E06-55A by NXP Semiconductors
Overview of BUK9E06-55A by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| HAT2265H-EL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 30V 55A 3.3Mohm Lfpak | |
| HAT2165H-EL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 30V 55A 3.3Mohm Lfpak | |
| RJK0453DPB-00#J5 | Renesas Electronics Corporation | Nch Single Power Mosfet 40V 55A 2.3Mohm Lfpak |
Part Details for BUK9E06-55A
BUK9E06-55A CAD Models
BUK9E06-55A Part Data Attributes
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BUK9E06-55A
NXP Semiconductors
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Datasheet
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BUK9E06-55A
NXP Semiconductors
TRANSISTOR 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-262AA | |
| Package Description | PLASTIC, TO-262, I2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 1100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0067 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 616 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BUK9E06-55A
This table gives cross-reference parts and alternative options found for BUK9E06-55A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK9E06-55A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUK9E06-55A | Nexperia | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | BUK9E06-55A vs BUK9E06-55A |
| 934056832127 | Nexperia | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | BUK9E06-55A vs 934056832127 |