Part Details for BUK545-200A by NXP Semiconductors
Overview of BUK545-200A by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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DC2442A | Analog Devices | LTC4282 Demo Board - 200A Hot | |
DC2455A-C | Analog Devices | LTM4650-1 Demo Board - 200A, 4 | |
RJP65S08DWA-00#W0 | Renesas Electronics Corporation | IGBT 650V 200A Wafer |
Part Details for BUK545-200A
BUK545-200A CAD Models
BUK545-200A Part Data Attributes
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BUK545-200A
NXP Semiconductors
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Datasheet
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BUK545-200A
NXP Semiconductors
TRANSISTOR 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, FULL PACK-3, FET General Purpose Power
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 7.6 A | |
Drain-source On Resistance-Max | 0.23 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 80 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 30 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 235 ns | |
Turn-on Time-Max (ton) | 115 ns |
Alternate Parts for BUK545-200A
This table gives cross-reference parts and alternative options found for BUK545-200A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK545-200A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APT4040BN | Power Field-Effect Transistor, 16A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Advanced Power Technology | BUK545-200A vs APT4040BN |
APT4550BN | Power Field-Effect Transistor, 14A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Advanced Power Technology | BUK545-200A vs APT4550BN |
BUK454-60H | TRANSISTOR 41 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | BUK545-200A vs BUK454-60H |
APT5022BNFR | Power Field-Effect Transistor, 27A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Advanced Power Technology | BUK545-200A vs APT5022BNFR |
BUK9506-30 | TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | BUK545-200A vs BUK9506-30 |
PHW7N60E | TRANSISTOR 7 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN, FET General Purpose Power | NXP Semiconductors | BUK545-200A vs PHW7N60E |
PHP33N10 | TRANSISTOR 34 A, 100 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | BUK545-200A vs PHP33N10 |
PHP130N03LT | TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | BUK545-200A vs PHP130N03LT |
PHW14N50E | TRANSISTOR 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power | NXP Semiconductors | BUK545-200A vs PHW14N50E |
PHP191NQ06LT,127 | N-channel TrenchMOS logic level FET@en-us TO-220 3-Pin | Nexperia | BUK545-200A vs PHP191NQ06LT,127 |