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Transistors Power Field-Effect Transistors BSP129

Transistors
BSP129
Description: Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Overview of BSP129 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Audio and Video Systems Automotive

Price & Stock for BSP129 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 34M5261
Newark Depletion Mode Mosfet, 240V, 120Ma, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:240V, Continuous Drain Current Id:120Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:1.7W Rohs Compliant: Yes |Infineon BSP129 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
Bristol Electronics   1
RFQ
Quest Components MOSFET Transistor, N-Channel, SOT-223 1
  • 1 $3.7200
$3.7200 Buy Now
BSP129
Ameya Holding Limited   Min Qty: 10 465
  • 10 $0.8434
  • 25 $0.8361
  • 50 $0.8282
  • 100 $0.8196
$0.8196 / $0.8434

CAD Models for BSP129 by Infineon Technologies AG
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Part Data Attributes for BSP129 by Infineon Technologies AG
Parametric Data

BSP129
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
SOT-223
Package Description
SMALL OUTLINE, R-PDSO-G4
Pin Count
4
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
240 V
Drain Current-Max (ID)
0.35 A
Drain-source On Resistance-Max
20 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G4
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
4
Operating Mode
DEPLETION MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1.7 W
Pulsed Drain Current-Max (IDM)
1.4 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
Want to compare parts?
  1. BSP129
    Infineon Technologies AG
    Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
    VS

Alternate Parts for BSP129

This table gives cross-reference parts and alternative options found for BSP129. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP129, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BSP129E6327 Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP129 vs BSP129E6327
BSP129E-6327 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Infineon Technologies AG BSP129 vs BSP129E-6327
BSP129L6906 Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP129 vs BSP129L6906
Part Number Description Manufacturer Compare
BSP300 Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP129 vs BSP300
BSP300L6433 Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP129 vs BSP300L6433
BSP129E6327 Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP129 vs BSP129E6327
BSP135E6327 Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP129 vs BSP135E6327
BSP88L6327 Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP129 vs BSP88L6327
BSP88 Power Field-Effect Transistor, 0.29A I(D), 240V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP129 vs BSP88
BSP135L6327 Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP129 vs BSP135L6327
BSP135E6327 Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP129 vs BSP135E6327
BSP135E6906 Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP129 vs BSP135E6906
BSP300E6327 Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP129 vs BSP300E6327

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