Part Details for BSM50GD120DN2G by Infineon Technologies AG
Overview of BSM50GD120DN2G by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for BSM50GD120DN2G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1 |
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RFQ | ||
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Chip1Cloud | IGBT MOD 1200V 78A 400W | 50 |
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RFQ |
Part Details for BSM50GD120DN2G
BSM50GD120DN2G CAD Models
BSM50GD120DN2G Part Data Attributes
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BSM50GD120DN2G
Infineon Technologies AG
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Datasheet
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BSM50GD120DN2G
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-39
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-XUFM-T39 | |
| Pin Count | 39 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 78 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-T39 | |
| Number of Elements | 6 | |
| Number of Terminals | 39 | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 400 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 450 ns | |
| Turn-on Time-Nom (ton) | 100 ns | |
| VCEsat-Max | 3.7 V |
Alternate Parts for BSM50GD120DN2G
This table gives cross-reference parts and alternative options found for BSM50GD120DN2G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM50GD120DN2G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSM50GD120DN2G | Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM50GD120DN2G vs BSM50GD120DN2G |