BLV33F
Description: RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, FM-6

Overview of BLV33F by Advanced Semiconductor Inc

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics

CAD Models for BLV33F by Advanced Semiconductor Inc
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Part Data Attributes for BLV33F by Advanced Semiconductor Inc

BLV33F
Advanced Semiconductor Inc
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
ASI SEMICONDUCTOR INC
Package Description
FLANGE MOUNT, R-CXFM-F6
Pin Count
6
Reach Compliance Code
unknown
ECCN Code
EAR99
Collector Current-Max (IC)
10 A
Collector-Base Capacitance-Max
80 pF
Collector-Emitter Voltage-Max
35 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
15
Highest Frequency Band
VERY HIGH FREQUENCY BAND
JESD-30 Code
R-CXFM-F6
Number of Elements
1
Number of Terminals
6
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
133 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
UNSPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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  1. BLV33F
    Advanced Semiconductor Inc
    RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, FM-6
    VS

Alternate Parts for BLV33F

This table gives cross-reference parts and alternative options found for BLV33F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLV33F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SD1013 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN Microsemi Corporation BLV33F vs SD1013
SD1050 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN Advanced Power Technology BLV33F vs SD1050
2N3375 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN Microsemi Corporation BLV33F vs 2N3375
BLW31 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc BLV33F vs BLW31
TPV385 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc BLV33F vs TPV385
MRF314 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, CASE 211-07, 4 PIN MACOM BLV33F vs MRF314
BLY93A VHF BAND, Si, NPN, RF POWER TRANSISTOR NXP Semiconductors BLV33F vs BLY93A
BLV75/12 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, FM-6, BIP RF Power NXP Semiconductors BLV33F vs BLV75/12
SD1457 VHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.500 INCH, PLASTIC, M174, FM-4 STMicroelectronics BLV33F vs SD1457
SD1448 UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.280 INCH, PLASTIC, M122, 4 PIN STMicroelectronics BLV33F vs SD1448

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