Datasheets
BCP56-10T1 by:

1A, 80V, NPN, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN

Part Details for BCP56-10T1 by onsemi

Overview of BCP56-10T1 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for BCP56-10T1

Part # Distributor Description Stock Price Buy
Bristol Electronics   1159
RFQ
Quest Components Bipolar Junction Transistor, NPN Type, TO-261AA 4000
  • 1 $0.2025
  • 371 $0.1080
  • 1,853 $0.0878
$0.0878 / $0.2025 Buy Now
Quest Components Bipolar Junction Transistor, NPN Type, TO-261AA 396
  • 1 $0.4900
  • 42 $0.1470
  • 341 $0.0980
$0.0980 / $0.4900 Buy Now
Quest Components Bipolar Junction Transistor, NPN Type, TO-261AA 927
  • 1 $1.0000
  • 14 $0.4500
  • 112 $0.3000
$0.3000 / $1.0000 Buy Now
NexGen Digital   910
RFQ
Chip1Cloud NPN Silicon Epitaxial Transistor 15000
RFQ

Part Details for BCP56-10T1

BCP56-10T1 CAD Models

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BCP56-10T1 Part Data Attributes:

BCP56-10T1 onsemi
Buy Now Datasheet
Compare Parts:
BCP56-10T1 onsemi 1A, 80V, NPN, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code TO-261AA
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Manufacturer Package Code CASE 318E-04
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 63
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 1.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 130 MHz

Alternate Parts for BCP56-10T1

This table gives cross-reference parts and alternative options found for BCP56-10T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BCP56-10T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BCP56-10 Power Bipolar Transistor, 1A I(C), NPN, WEITRON INTERNATIONAL CO., LTD. BCP56-10T1 vs BCP56-10
BCP56-10T1G 1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 63 to 160, SOT-223 (TO-261) 4 LEAD, 1000-REEL onsemi BCP56-10T1 vs BCP56-10T1G
BCP56-10T3G 1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 63 to 160, 4000-REEL onsemi BCP56-10T1 vs BCP56-10T3G
BCP56-10 1A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, SO-4 STMicroelectronics BCP56-10T1 vs BCP56-10
BCP56-10 Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4 Continental Device India Ltd BCP56-10T1 vs BCP56-10
Part Number Description Manufacturer Compare
BCP56-10 1A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, SO-4 STMicroelectronics BCP56-10T1 vs BCP56-10
BCP56-10 Power Bipolar Transistor, 1A I(C), NPN, WEITRON INTERNATIONAL CO., LTD. BCP56-10T1 vs BCP56-10
BCP56-10T3G 1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 63 to 160, 4000-REEL onsemi BCP56-10T1 vs BCP56-10T3G
BCP56-10 Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4 Continental Device India Ltd BCP56-10T1 vs BCP56-10
BCP56-10T1G 1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 63 to 160, SOT-223 (TO-261) 4 LEAD, 1000-REEL onsemi BCP56-10T1 vs BCP56-10T1G

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