Datasheets
BCP56-10 by:

Power Bipolar Transistor, 1A I(C), NPN,

Part Details for BCP56-10 by WEITRON INTERNATIONAL CO., LTD.

Overview of BCP56-10 by WEITRON INTERNATIONAL CO., LTD.

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for BCP56-10

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BCP56-10 Part Data Attributes:

BCP56-10 WEITRON INTERNATIONAL CO., LTD.
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BCP56-10 WEITRON INTERNATIONAL CO., LTD. Power Bipolar Transistor, 1A I(C), NPN,
Rohs Code No
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer WEITRON TECHNOLOGY CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 63
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 1.5 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 130 MHz

Alternate Parts for BCP56-10

This table gives cross-reference parts and alternative options found for BCP56-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BCP56-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BCP56-10T1 1A, 80V, NPN, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN onsemi BCP56-10 vs BCP56-10T1
BCP56-10T1G 1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 63 to 160, SOT-223 (TO-261) 4 LEAD, 1000-REEL onsemi BCP56-10 vs BCP56-10T1G
BCP56-10T3G 1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 63 to 160, 4000-REEL onsemi BCP56-10 vs BCP56-10T3G
BCP56-10 1A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, SO-4 STMicroelectronics BCP56-10 vs BCP56-10
BCP56-10 Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4 Continental Device India Ltd BCP56-10 vs BCP56-10
Part Number Description Manufacturer Compare
BCP56-10 1A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, SO-4 STMicroelectronics BCP56-10 vs BCP56-10
BCP56-10T1 1A, 80V, NPN, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN onsemi BCP56-10 vs BCP56-10T1
BCP56-10T3G 1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 63 to 160, 4000-REEL onsemi BCP56-10 vs BCP56-10T3G
BCP56-10 Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4 Continental Device India Ltd BCP56-10 vs BCP56-10
BCP56-10T1G 1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 63 to 160, SOT-223 (TO-261) 4 LEAD, 1000-REEL onsemi BCP56-10 vs BCP56-10T1G

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