Datasheets
BB804R215 by: NXP Semiconductors

DIODE VHF BAND, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode

Part Details for BB804R215 by NXP Semiconductors

Overview of BB804R215 by NXP Semiconductors

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Part Details for BB804R215

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BB804R215 Part Data Attributes:

BB804R215 NXP Semiconductors
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BB804R215 NXP Semiconductors DIODE VHF BAND, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 18 V
Configuration COMMON CATHODE, 2 ELEMENTS
Diode Capacitance Ratio-Min 1.65
Diode Capacitance-Nom 42.75 pF
Diode Element Material SILICON
Diode Type VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY
JESD-30 Code R-PDSO-G3
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 0.25 W
Qualification Status Not Qualified
Reverse Current-Max 0.02 µA
Reverse Test Voltage 16 V
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Variable Capacitance Diode Classification ABRUPT

Alternate Parts for BB804R215

This table gives cross-reference parts and alternative options found for BB804R215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BB804R215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BB804TRL DIODE SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode NXP Semiconductors BB804R215 vs BB804TRL
BB804R235 DIODE VHF BAND, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode NXP Semiconductors BB804R215 vs BB804R235
BB804R212 DIODE VHF BAND, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode NXP Semiconductors BB804R215 vs BB804R212
BB804TRL13 DIODE SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode NXP Semiconductors BB804R215 vs BB804TRL13
Part Number Description Manufacturer Compare
BB804 Variable Capacitance Diode, 42pF C(T), 18V, Silicon Siemens BB804R215 vs BB804
BB804W235 DIODE VHF BAND, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC PACKAGE-3, Variable Capacitance Diode NXP Semiconductors BB804R215 vs BB804W235
MA4ST406CK-T VARACTOR DIODE,DUAL, COMMON CATHODE,27PF C(T),SOT-23 TE Connectivity BB804R215 vs MA4ST406CK-T
BB804TRL13 DIODE SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode NXP Semiconductors BB804R215 vs BB804TRL13
BB814 Variable Capacitance Diode, Silicon TDK Micronas GmbH BB804R215 vs BB814
BB804G DIODE VHF BAND, 45.75 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SST3, 3 PIN, Variable Capacitance Diode NXP Semiconductors BB804R215 vs BB804G
BB201,215 BB201 - Low-voltage variable capacitance double diode TO-236 3-Pin NXP Semiconductors BB804R215 vs BB201,215
MA4ST404CK-T/R HF-UHF BAND, 18pF, 22V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, SURFACE MOUNT PACKAGE-3 TE Connectivity BB804R215 vs MA4ST404CK-T/R
HVM16TL 14V, SILICON, VARIABLE CAPACITANCE DIODE Renesas Electronics Corporation BB804R215 vs HVM16TL
KV1450 Variable Capacitance Diode, Ultra High Frequency, 62.5pF C(T), 18V, Silicon Asahi Kasei Power Devices Corporation BB804R215 vs KV1450

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