BB804R215
vs
BB804R212
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
R-PDSO-G3
|
R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Breakdown Voltage-Min |
18 V
|
18 V
|
| Configuration |
COMMON CATHODE, 2 ELEMENTS
|
COMMON CATHODE, 2 ELEMENTS
|
| Diode Capacitance Ratio-Min |
1.65
|
1.65
|
| Diode Capacitance-Nom |
42.75 pF
|
42.75 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| Frequency Band |
VERY HIGH FREQUENCY
|
VERY HIGH FREQUENCY
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.25 W
|
0.25 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reverse Current-Max |
0.02 µA
|
0.02 µA
|
| Reverse Test Voltage |
16 V
|
16 V
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare BB804R215 with alternatives
Compare BB804R212 with alternatives