Datasheets
AUIRL3705ZS by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

Part Details for AUIRL3705ZS by International Rectifier

Overview of AUIRL3705ZS by International Rectifier

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Price & Stock for AUIRL3705ZS

Part # Distributor Description Stock Price Buy
DISTI # 2156-AUIRL3705ZS-IR-ND
DigiKey MOSFET N-CH 55V 75A D2PAK Min Qty: 205 Container: Bulk MARKETPLACE PRODUCT 8500
In Stock
  • 205 $1.4700
$1.4700 Buy Now
Rochester Electronics AUIRL3705 - 55V-60V N-Channel Automotive MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 8500
  • 1 $1.4800
  • 25 $1.4500
  • 100 $1.3900
  • 500 $1.3300
  • 1,000 $1.2600
$1.2600 / $1.4800 Buy Now
ComSIT USA AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant Europe - 350
RFQ

Part Details for AUIRL3705ZS

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AUIRL3705ZS Part Data Attributes:

AUIRL3705ZS International Rectifier
Buy Now Datasheet
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AUIRL3705ZS International Rectifier Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description ROHS COMPLIANT, PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 180 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 130 W
Pulsed Drain Current-Max (IDM) 340 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRL3705ZS

This table gives cross-reference parts and alternative options found for AUIRL3705ZS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRL3705ZS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AUIRL3705ZSTRL Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG AUIRL3705ZS vs AUIRL3705ZSTRL
IRL3705ZSTRRPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG AUIRL3705ZS vs IRL3705ZSTRRPBF
AUIRL3705ZSTRR Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG AUIRL3705ZS vs AUIRL3705ZSTRR
IRL3705ZSTRLPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG AUIRL3705ZS vs IRL3705ZSTRLPBF
AUIRL3705ZSTRR Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier AUIRL3705ZS vs AUIRL3705ZSTRR
IRL3705ZSPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG AUIRL3705ZS vs IRL3705ZSPBF
IRL3705ZSTRLPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRL3705ZS vs IRL3705ZSTRLPBF
IRL3705ZS Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier AUIRL3705ZS vs IRL3705ZS
IRL3705ZSTRR Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier AUIRL3705ZS vs IRL3705ZSTRR
IRL3705ZSPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRL3705ZS vs IRL3705ZSPBF
Part Number Description Manufacturer Compare
MTP3N100 3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC AUIRL3705ZS vs MTP3N100
IRL3705ZSPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRL3705ZS vs IRL3705ZSPBF
IRF2804PBF Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier AUIRL3705ZS vs IRF2804PBF
IRF3710ZSTRLPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRL3705ZS vs IRF3710ZSTRLPBF
MTD5N05 5A, 50V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Motorola Mobility LLC AUIRL3705ZS vs MTD5N05
RF1S45N06LESM 45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation AUIRL3705ZS vs RF1S45N06LESM
IRF540NSPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRL3705ZS vs IRF540NSPBF
MTD4P06 4A, 60V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 Motorola Mobility LLC AUIRL3705ZS vs MTD4P06
IRFS4321PBF Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier AUIRL3705ZS vs IRFS4321PBF
AUIRFZ48ZSTRL Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier AUIRL3705ZS vs AUIRFZ48ZSTRL

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