There are no models available for this part yet.
Overview of AUIRFR2407 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for AUIRFR2407 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
75T6320
|
Newark | Mosfet Transistor, N Channel, 42 A, 75 V, 0.0218 Ohm, 10 V, 2 V Rohs Compliant: Yes |Infineon AUIRFR2407 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$0.8370 / $1.8900 | Buy Now | |
DISTI #
AUIRFR2407
|
Avnet Americas | Trans MOSFET N-CH 75V 42A 3-Pin(2+Tab) DPAK Tube - Rail/Tube (Alt: AUIRFR2407) RoHS: Compliant Min Qty: 3000 Package Multiple: 75 Container: Tube | 0 |
|
RFQ | ||
DISTI #
SP001520320
|
EBV Elektronik | Trans MOSFET N-CH 75V 42A 3-Pin(2+Tab) DPAK Tube (Alt: SP001520320) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 17 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
CAD Models for AUIRFR2407 by Infineon Technologies AG
Part Data Attributes for AUIRFR2407 by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Package Description
|
ROHS COMPLIANT, PLASTIC, DPAK-3
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Infineon
|
Additional Feature
|
AVALANCHE RATED, HIGH RELIABILITY
|
Avalanche Energy Rating (Eas)
|
130 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
75 V
|
Drain Current-Max (ID)
|
42 A
|
Drain-source On Resistance-Max
|
0.026 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-252AA
|
JESD-30 Code
|
R-PSSO-G2
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
110 W
|
Pulsed Drain Current-Max (IDM)
|
170 A
|
Surface Mount
|
YES
|
Terminal Finish
|
MATTE TIN OVER NICKEL
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for AUIRFR2407
This table gives cross-reference parts and alternative options found for AUIRFR2407. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFR2407, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
AUIRFR2407 | Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRFR2407 vs AUIRFR2407 |
IRFR2407 | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | AUIRFR2407 vs IRFR2407 |
AUIRFR2407TRR | Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRFR2407 vs AUIRFR2407TRR |
AUIRFR2407TRL | Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | AUIRFR2407 vs AUIRFR2407TRL |
IRFR2407TRPBF | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | AUIRFR2407 vs IRFR2407TRPBF |
SP001556854 | Power Field-Effect Transistor, | Infineon Technologies AG | AUIRFR2407 vs SP001556854 |
AUIRFR2407TR | Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRFR2407 vs AUIRFR2407TR |
IRFR2407TR | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | AUIRFR2407 vs IRFR2407TR |
IRFR2407TRRPBF | Power Field-Effect Transistor, | Infineon Technologies AG | AUIRFR2407 vs IRFR2407TRRPBF |
AUIRFR2407TRL | Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRFR2407 vs AUIRFR2407TRL |
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