Datasheets
AS4C32M16D1-5BIN by: Alliance Memory Inc

DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, TFBGA-60

Part Details for AS4C32M16D1-5BIN by Alliance Memory Inc

Overview of AS4C32M16D1-5BIN by Alliance Memory Inc

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Price & Stock for AS4C32M16D1-5BIN

Part # Distributor Description Stock Price Buy
DISTI # 85AK6957
Newark Ddr1, 512Mb, 32M X 16, 2.5V, 60-Ball Bga, 200 Mhz, Industriall Temp |Alliance Memory AS4C32M16D1-5BIN Min Qty: 240 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $5.6000
  • 5,000 $5.5000
$5.5000 / $5.6000 Buy Now
DISTI # 1450-1327-ND
DigiKey IC DRAM 512MBIT PAR 60TFBGA Min Qty: 1 Lead time: 8 Weeks Container: Tray 260
In Stock
  • 1 $5.8400
  • 10 $5.3300
  • 25 $5.2284
  • 40 $5.1908
  • 80 $4.6576
  • 240 $4.6402
  • 480 $4.3489
  • 960 $4.1654
$4.1654 / $5.8400 Buy Now
DISTI # AS4C32M16D1-5BIN
Avnet Americas DRAM Chip DDR SDRAM 512M-Bit 32M x 16 2.5V 60-Pin TFBGA - Trays (Alt: AS4C32M16D1-5BIN) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 8 Weeks, 0 Days Container: Tray 8232 Factory Stock
  • 240 $5.0400
$5.0400 Buy Now
DISTI # 913-4C32M16D1-5BIN
Mouser Electronics DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Industriall Temp - Tray RoHS: Compliant 0
  • 1 $5.6700
  • 10 $4.5300
  • 100 $4.5100
  • 240 $4.2200
  • 480 $4.0400
$4.0400 / $5.6700 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 240 Lead time: 8 Weeks Container: Tray 0
Tray
  • 240 $3.5000
$3.5000 Buy Now
Karl Kruse GmbH & Co KG DDR1 512Mb 32M X 16 2.5V 60-ball BGA 200 MHz Industriall Temp 3264
RFQ
DISTI # AS4C32M16D1-5BIN
Avnet Silica DRAM Chip DDR SDRAM 512M-Bit 32M x 16 2.5V 60-Pin TFBGA (Alt: AS4C32M16D1-5BIN) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 9 Weeks, 0 Days Silica - 2400
Buy Now
New Advantage Corporation TFBGA 60/I�/32M x 16 bit DDR Synchronous DRAM (SDRAM) RoHS: Compliant Min Qty: 1 Package Multiple: 240 2105
  • 240 $5.4200
  • 2,105 $5.0400
$5.0400 / $5.4200 Buy Now

Part Details for AS4C32M16D1-5BIN

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AS4C32M16D1-5BIN Part Data Attributes

AS4C32M16D1-5BIN Alliance Memory Inc
Buy Now Datasheet
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AS4C32M16D1-5BIN Alliance Memory Inc DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, TFBGA-60
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description TFBGA-60
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Factory Lead Time 8 Weeks
Samacsys Manufacturer Alliance Memory
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B60
Length 13 mm
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 32MX16
Package Body Material PLASTIC/EPOXY
Package Code BGA
Package Shape RECTANGULAR
Package Style GRID ARRAY
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for AS4C32M16D1-5BIN

This table gives cross-reference parts and alternative options found for AS4C32M16D1-5BIN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C32M16D1-5BIN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V58C2512164SFLJ6I DDR DRAM, ProMOS Technologies Inc AS4C32M16D1-5BIN vs V58C2512164SFLJ6I
Part Number Description Manufacturer Compare
SCX25D512160AF-7AX DDR DRAM, Xi'an UniIC Semiconductors Co Ltd AS4C32M16D1-5BIN vs SCX25D512160AF-7AX
V58C2512164SFLI5 DDR DRAM, ProMOS Technologies Inc AS4C32M16D1-5BIN vs V58C2512164SFLI5
IS43R16320F-6TL DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, TSOP2-66 Integrated Silicon Solution Inc AS4C32M16D1-5BIN vs IS43R16320F-6TL
IS43R16320F-5BL DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, FBGA-60 Integrated Silicon Solution Inc AS4C32M16D1-5BIN vs IS43R16320F-5BL
IS46R16320E-6BLA1-TR DDR DRAM, Integrated Silicon Solution Inc AS4C32M16D1-5BIN vs IS46R16320E-6BLA1-TR
IS43R16320F-4BL DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, FBGA-60 Integrated Silicon Solution Inc AS4C32M16D1-5BIN vs IS43R16320F-4BL
IS43R16320E-5TLI-TR DDR DRAM, Integrated Silicon Solution Inc AS4C32M16D1-5BIN vs IS43R16320E-5TLI-TR
MT46V32M16CV-5BLIT:J DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 8 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc AS4C32M16D1-5BIN vs MT46V32M16CV-5BLIT:J
IS43R16320F-6BL-TR DDR DRAM, Integrated Silicon Solution Inc AS4C32M16D1-5BIN vs IS43R16320F-6BL-TR
SCB25D512160AE-6B DDR DRAM, Xi'an UniIC Semiconductors Co Ltd AS4C32M16D1-5BIN vs SCB25D512160AE-6B

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