Part Details for APT35GN120BG by Microchip Technology Inc
Overview of APT35GN120BG by Microchip Technology Inc
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for APT35GN120BG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
78AH5899
|
Newark | Igbt Fieldstop Low Frequency Single 1200 V 35 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT35GN120BG RoHS: Compliant Min Qty: 70 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$6.8600 / $8.4700 | Buy Now |
|
DISTI #
APT35GN120BG-ND
|
DigiKey | IGBT NPT FS 1200V 94A TO247 Min Qty: 1 Lead time: 28 Weeks Container: Tube |
46 In Stock |
|
$6.8750 / $8.4700 | Buy Now |
|
DISTI #
APT35GN120BG
|
Avnet Americas | Trans IGBT Chip N-CH 1.2KV 94A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT35GN120BG) RoHS: Compliant Min Qty: 70 Package Multiple: 1 Lead time: 28 Weeks, 0 Days Container: Tube | 0 |
|
$6.8600 / $8.4700 | Buy Now |
|
DISTI #
494-APT35GN120BG
|
Mouser Electronics | IGBTs IGBT Fieldstop Low Frequency Single 1200 V 35 A TO-247 RoHS: Compliant | 92 |
|
$7.3000 / $8.4700 | Buy Now |
|
DISTI #
APT35GN120BG
|
Microchip Technology Inc | IGBT Fieldstop Low Frequency Single 1200 V 35 A TO-247, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
|
$6.5000 / $8.4700 | Buy Now |
|
|
Future Electronics | APT35GN120 Series 1200 V 94 A 379 W 220 nC NPT Field Stop IGBT - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 50 Lead time: 28 Weeks Container: Tube | 0Tube |
|
$7.1800 / $7.3300 | Buy Now |
|
|
Onlinecomponents.com | IGBT Transistor - NPT, Trench Field Stop Type - 1200 V - 94 A - 2.1V Vce(on) (Max) @ 15V Vge, 35A Ic - 379 W - 220 nC Gate Charge - TO-247-3 Variant. RoHS: Compliant |
100 In Stock |
|
$6.9800 / $8.7300 | Buy Now |
|
DISTI #
77794941
|
Verical | Trans IGBT Chip N-CH 1200V 94A 379W 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 10 Package Multiple: 5 Date Code: 2406 | Americas - 100 |
|
$9.2560 / $11.3490 | Buy Now |
|
DISTI #
APT35GN120BG
|
TME | Transistor: IGBT, Field Stop, 1.2kV, 46A, 379W, TO247-3 Min Qty: 1 | 0 |
|
$9.7400 / $12.3100 | RFQ |
|
|
NAC | FG, IGBT, 1200V, TO-247, RoHS RoHS: Compliant Min Qty: 45 Package Multiple: 1 Container: Tube | 0 |
|
$6.7100 / $8.0900 | Buy Now |
Part Details for APT35GN120BG
APT35GN120BG CAD Models
APT35GN120BG Part Data Attributes
|
|
APT35GN120BG
Microchip Technology Inc
Buy Now
Datasheet
|
Compare Parts:
APT35GN120BG
Microchip Technology Inc
Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 94 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 379 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 465 ns | |
| Turn-on Time-Nom (ton) | 46 ns |
Alternate Parts for APT35GN120BG
This table gives cross-reference parts and alternative options found for APT35GN120BG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT35GN120BG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | APT35GN120BG vs SGP13N60UF |
| IXGH25N100U1 | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | APT35GN120BG vs IXGH25N100U1 |
| HGTG40N60B3_NL | Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | Fairchild Semiconductor Corporation | APT35GN120BG vs HGTG40N60B3_NL |
| IRG4PC30FPBF | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | Infineon Technologies AG | APT35GN120BG vs IRG4PC30FPBF |
| IRGPS40B120U | Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN | International Rectifier | APT35GN120BG vs IRGPS40B120U |
| HGTP15N50C1 | Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-220AB | Harris Semiconductor | APT35GN120BG vs HGTP15N50C1 |
| IRG4BC30U-SPBF | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | APT35GN120BG vs IRG4BC30U-SPBF |
| IXGH32N60B | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | APT35GN120BG vs IXGH32N60B |
| IRG4BC15UD-SPBF | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | APT35GN120BG vs IRG4BC15UD-SPBF |
| HGTP6N50E1D | Insulated Gate Bipolar Transistor, 7.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | APT35GN120BG vs HGTP6N50E1D |