Datasheets
APT10086BVRG by:

Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Details for APT10086BVRG by Microchip Technology Inc

Overview of APT10086BVRG by Microchip Technology Inc

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Applications Automotive

Price & Stock for APT10086BVRG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5580
Newark Mosfet Mos5 1000 V 86 Ohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT10086BVRG RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $19.0700
  • 100 $16.4600
  • 250 $15.8600
  • 500 $15.4900
$15.4900 / $19.0700 Buy Now
DISTI # APT10086BVRG-ND
DigiKey MOSFET N-CH 1000V 13A TO247 Min Qty: 30 Lead time: 26 Weeks Container: Tube Temporarily Out of Stock
  • 30 $19.0700
$19.0700 Buy Now
DISTI # APT10086BVRG
Avnet Americas Trans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT10086BVRG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 1 $19.0700
  • 100 $16.4600
  • 250 $15.8600
  • 500 $15.4900
$15.4900 / $19.0700 Buy Now
DISTI # 494-APT10086BVRG
Mouser Electronics MOSFETs MOSFET MOS5 1000 V 86 Ohm TO-247 RoHS: Compliant 46
  • 1 $19.0700
  • 100 $16.4600
$16.4600 / $19.0700 Buy Now
DISTI # APT10086BVRG
Microchip Technology Inc MOSFET MOS 5 1000 V 860 mOhm TO-247, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $19.0700
  • 100 $16.4600
  • 250 $15.8600
  • 500 $15.4900
  • 1,000 $15.1100
  • 5,000 $14.6000
$14.6000 / $19.0700 Buy Now
Future Electronics 1000V, 13A, 0.86OHM, TO-247 RoHS: Compliant pbFree: Yes Min Qty: 110 Package Multiple: 1 Lead time: 26 Weeks Container: Bulk 0
Bulk
  • 1 $16.9500
  • 5 $16.7300
  • 25 $16.5100
  • 50 $16.4200
  • 150 $16.1400
$16.1400 / $16.9500 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant 705 Factory Stock
  • 1 $18.5000
  • 10 $16.9500
  • 25 $16.4800
  • 50 $16.0500
  • 100 $15.4300
  • 250 $15.2000
  • 500 $14.9700
$14.9700 / $18.5000 Buy Now
DISTI # APT10086BVRG
TME Transistor: N-MOSFET, POWER MOS 5®, unipolar, 1kV, 13A, Idm: 52A Min Qty: 1 0
  • 1 $27.5800
  • 3 $24.8200
  • 10 $21.9300
$21.9300 / $27.5800 RFQ
NAC FG, MOSFET, 1000V, TO-247, RoHS RoHS: Compliant Min Qty: 20 Package Multiple: 1 Container: Tube 0
  • 1 $17.6900
  • 100 $16.2900
  • 500 $15.4700
  • 800 $15.1000
$15.1000 / $17.6900 Buy Now
DISTI # APT10086BVRG
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1 1
  • 1 $17.0100
  • 50 $16.5600
  • 100 $16.3500
$16.3500 / $17.0100 Buy Now
Master Electronics Trans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant 705 Factory Stock
  • 1 $18.5000
  • 10 $16.9500
  • 25 $16.4800
  • 50 $16.0500
  • 100 $15.4300
  • 250 $15.2000
  • 500 $14.9700
$14.9700 / $18.5000 Buy Now

Part Details for APT10086BVRG

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APT10086BVRG Part Data Attributes

APT10086BVRG Microchip Technology Inc
Buy Now Datasheet
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APT10086BVRG Microchip Technology Inc Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Avalanche Energy Rating (Eas) 1300 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.86 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 52 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT10086BVRG

This table gives cross-reference parts and alternative options found for APT10086BVRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT10086BVRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT10086BVR Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Microsemi Corporation APT10086BVRG vs APT10086BVR
Part Number Description Manufacturer Compare
APT1001RBLC Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Advanced Power Technology APT10086BVRG vs APT1001RBLC
IXFV12N100P Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN IXYS Corporation APT10086BVRG vs IXFV12N100P
APT1001RBNRG Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Microsemi Corporation APT10086BVRG vs APT1001RBNRG
APT1001RBVRG Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc APT10086BVRG vs APT1001RBVRG
SHD2396FS Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN Sensitron Semiconductors APT10086BVRG vs SHD2396FS
IXFH12N90P Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 Littelfuse Inc APT10086BVRG vs IXFH12N90P
APT1001RBNR Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Microsemi Corporation APT10086BVRG vs APT1001RBNR
IXFX12N90Q Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN IXYS Corporation APT10086BVRG vs IXFX12N90Q
SHD2397FS Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN Sensitron Semiconductors APT10086BVRG vs SHD2397FS
IXFH12N100Q Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IXYS Corporation APT10086BVRG vs IXFH12N100Q

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