There are no models available for this part yet.
Overview of 7N60G-TF1-T-M by Unisonic Technologies Co Ltd
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
EVAL-ADN4650EB1Z | Analog Devices | ADN4650 Evaluation Board | |
ADN4651BRSZ-RL7 | Analog Devices | 3.75kVrms LVDS Iso 600Mbps Dua | |
ADN4692EBRZ-RL7 | Analog Devices | MLVDS Xcvr,FD,100M Type 1 Rx,E |
CAD Models for 7N60G-TF1-T-M by Unisonic Technologies Co Ltd
Part Data Attributes for 7N60G-TF1-T-M by Unisonic Technologies Co Ltd
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
UNISONIC TECHNOLOGIES CO LTD
|
Part Package Code
|
TO-220AB
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
530 mJ
|
Case Connection
|
ISOLATED
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
600 V
|
Drain Current-Max (ID)
|
7.4 A
|
Drain-source On Resistance-Max
|
1.2 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
29.6 A
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for 7N60G-TF1-T-M
This table gives cross-reference parts and alternative options found for 7N60G-TF1-T-M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 7N60G-TF1-T-M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
7N60L-TF3-T-Q | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | 7N60G-TF1-T-M vs 7N60L-TF3-T-Q |
7N60L-TF3-T-F | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | 7N60G-TF1-T-M vs 7N60L-TF3-T-F |
PJF7NA60_T0_00001 | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220AB, 3 PIN | PanJit Semiconductor | 7N60G-TF1-T-M vs PJF7NA60_T0_00001 |
7N60G-TF1-T-F | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F1, 3 PIN | Unisonic Technologies Co Ltd | 7N60G-TF1-T-M vs 7N60G-TF1-T-F |
TSM7N65CIC0 | Power Field-Effect Transistor, 7A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, ITO-220, 3 PIN | Taiwan Semiconductor | 7N60G-TF1-T-M vs TSM7N65CIC0 |
7N65L-TF1-T | Power Field-Effect Transistor, 7.4A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F1, 3 PIN | Unisonic Technologies Co Ltd | 7N60G-TF1-T-M vs 7N65L-TF1-T |
7N65G-TF3-T | Power Field-Effect Transistor, 7.4A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | 7N60G-TF1-T-M vs 7N65G-TF3-T |
2SK3245 | Power Field-Effect Transistor, 8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FI, 3 PIN | SANYO Electric Co Ltd | 7N60G-TF1-T-M vs 2SK3245 |
7N60G-TF3-T-M | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | 7N60G-TF1-T-M vs 7N60G-TF3-T-M |
7N65AG-TF3-T | Power Field-Effect Transistor, 7A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | 7N60G-TF1-T-M vs 7N65AG-TF3-T |