Part Details for 7N60L-TF3-T-F by Unisonic Technologies Co Ltd
Overview of 7N60L-TF3-T-F by Unisonic Technologies Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for 7N60L-TF3-T-F
7N60L-TF3-T-F CAD Models
7N60L-TF3-T-F Part Data Attributes
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7N60L-TF3-T-F
Unisonic Technologies Co Ltd
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Datasheet
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7N60L-TF3-T-F
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | UNISONIC TECHNOLOGIES CO LTD | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 530 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7.4 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 29.6 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 7N60L-TF3-T-F
This table gives cross-reference parts and alternative options found for 7N60L-TF3-T-F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 7N60L-TF3-T-F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2SK3245 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FI, 3 PIN | 7N60L-TF3-T-F vs 2SK3245 |
| TSM7N65CIC0 | Taiwan Semiconductor | Check for Price | Power Field-Effect Transistor, 7A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, ITO-220, 3 PIN | 7N60L-TF3-T-F vs TSM7N65CIC0 |
| 8N60G-TF1-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F1, 3 PIN | 7N60L-TF3-T-F vs 8N60G-TF1-T |
| 7N60G-TF1-T-Q | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F1, 3 PIN | 7N60L-TF3-T-F vs 7N60G-TF1-T-Q |
| 7N60L-TF1-T-Q | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F1, 3 PIN | 7N60L-TF3-T-F vs 7N60L-TF1-T-Q |
| PJP7NA60_T0_00001 | PanJit Semiconductor | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | 7N60L-TF3-T-F vs PJP7NA60_T0_00001 |
| 8N60L-TF1-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F1, 3 PIN | 7N60L-TF3-T-F vs 8N60L-TF1-T |
| 7N60L-TF3-T-Q | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | 7N60L-TF3-T-F vs 7N60L-TF3-T-Q |
| 7N60G-TF3-T-F | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 7.4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN | 7N60L-TF3-T-F vs 7N60G-TF3-T-F |
| 7N65AG-TF3-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 7A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN | 7N60L-TF3-T-F vs 7N65AG-TF3-T |