| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 71V416L12BEGI8 | Renesas Electronics Corporation | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout | |
| 71V416L12BEG8 | Renesas Electronics Corporation | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout | |
| 71V416L12BEGI | Renesas Electronics Corporation | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout |
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
71V416L12BEG
|
Avnet Americas | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout - Trays (Alt: 71V416L12BEG) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tray | 49 Partner Stock |
|
RFQ |
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
RENESAS ELECTRONICS CORP
|
|
Part Package Code
|
CABGA
|
|
Pin Count
|
48
|
|
Manufacturer Package Code
|
BEG48
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
NLR
|
|
HTS Code
|
8542320041
|
|
Factory Lead Time
|
4 Weeks
|
|
Samacsys Manufacturer
|
Renesas Electronics
|
|
Access Time-Max
|
12 ns
|
|
I/O Type
|
COMMON
|
|
JESD-30 Code
|
S-PBGA-B48
|
|
JESD-609 Code
|
e1
|
|
Length
|
9 mm
|
|
Memory Density
|
4194304 bit
|
|
Memory IC Type
|
STANDARD SRAM
|
|
Memory Width
|
16
|
|
Moisture Sensitivity Level
|
3
|
|
Number of Functions
|
1
|
|
Number of Terminals
|
48
|
|
Number of Words
|
262144 words
|
|
Number of Words Code
|
256000
|
|
Operating Mode
|
ASYNCHRONOUS
|
|
Operating Temperature-Max
|
85 °C
|
|
Operating Temperature-Min
|
-40 °C
|
|
Organization
|
256KX16
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TFBGA
|
|
Package Equivalence Code
|
BGA48,6X8,30
|
|
Package Shape
|
SQUARE
|
|
Package Style
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
|
Parallel/Serial
|
PARALLEL
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Qualification Status
|
Not Qualified
|
|
Seated Height-Max
|
1.2 mm
|
|
Standby Current-Max
|
0.01 A
|
|
Standby Voltage-Min
|
3 V
|
|
Supply Current-Max
|
0.18 mA
|
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
|
Supply Voltage-Min (Vsup)
|
3 V
|
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
INDUSTRIAL
|
|
Terminal Finish
|
TIN SILVER COPPER
|
|
Terminal Form
|
BALL
|
|
Terminal Pitch
|
0.75 mm
|
|
Terminal Position
|
BOTTOM
|
|
Time@Peak Reflow Temperature-Max (s)
|
40
|
|
Width
|
9 mm
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IDT71V416YL12BEG4 | Standard SRAM, 256KX16, 12ns, CMOS, PBGA48 | Integrated Device Technology Inc | 71V416L12BEG vs IDT71V416YL12BEG4 |
| 71V416L12BEG8 | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout, CABGA0/Reel | Renesas Electronics Corporation | 71V416L12BEG vs 71V416L12BEG8 |
| 71V416L12BE8 | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout, CABGA0/Reel | Renesas Electronics Corporation | 71V416L12BEG vs 71V416L12BE8 |
| 71V416YL12BEG4 | Standard SRAM, 256KX16, 12ns, CMOS, PBGA48 | Integrated Device Technology Inc | 71V416L12BEG vs 71V416YL12BEG4 |
| 71V416L12BE | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout, CABGA250/Tray | Renesas Electronics Corporation | 71V416L12BEG vs 71V416L12BE |
| 71V416L12BEG | CABGA-48, Tray | Integrated Device Technology Inc | 71V416L12BEG vs 71V416L12BEG |
| IDT71V416L12BE8 | Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 | Integrated Device Technology Inc | 71V416L12BEG vs IDT71V416L12BE8 |
| 71V416YL12BE | Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 | Integrated Device Technology Inc | 71V416L12BEG vs 71V416YL12BE |
| IDT71V416L12BEG | Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 | Integrated Device Technology Inc | 71V416L12BEG vs IDT71V416L12BEG |
| IDT71V416YFL12BE | Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48 | Integrated Device Technology Inc | 71V416L12BEG vs IDT71V416YFL12BE |
