Datasheets
71V35761S200PF by:

Cache SRAM, 128KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100

Part Details for 71V35761S200PF by Integrated Device Technology Inc

Overview of 71V35761S200PF by Integrated Device Technology Inc

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Available Datasheets

Part # Manufacturer Description Datasheet
71V35761S200PFG Renesas Electronics Corporation 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O
71V35761S200PFG8 Renesas Electronics Corporation 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

Price & Stock for 71V35761S200PF

Part # Distributor Description Stock Price Buy
DISTI # 2156-71V35761S200PF-ND
DigiKey IC SRAM 4.5MBIT PARALLEL 100TQFP Min Qty: 139 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 280
In Stock
  • 139 $2.1700
$2.1700 Buy Now
Bristol Electronics   10
RFQ
Rochester Electronics 71V35761 - 128K X 36 3.3V Synchronous SRAM 3.3V I/O, Pipelined Output Burst Counter, Single Cycle Deselect ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 280
RFQ

Part Details for 71V35761S200PF

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71V35761S200PF Part Data Attributes

71V35761S200PF Integrated Device Technology Inc
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71V35761S200PF Integrated Device Technology Inc Cache SRAM, 128KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code QFP
Package Description 14 X 20 MM, PLASTIC, TQFP-100
Pin Count 100
Reach Compliance Code not_compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 3.1 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
JESD-30 Code R-PQFP-G100
JESD-609 Code e0
Length 20 mm
Memory Density 4718592 bit
Memory IC Type CACHE SRAM
Memory Width 36
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 100
Number of Words 131072 words
Number of Words Code 128000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 128KX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LQFP
Package Equivalence Code QFP100,.63X.87
Package Shape RECTANGULAR
Package Style FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 225
Qualification Status Not Qualified
Seated Height-Max 1.6 mm
Standby Current-Max 0.03 A
Standby Voltage-Min 3.14 V
Supply Current-Max 0.36 mA
Supply Voltage-Max (Vsup) 3.465 V
Supply Voltage-Min (Vsup) 3.135 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn85Pb15)
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) 20
Width 14 mm

Alternate Parts for 71V35761S200PF

This table gives cross-reference parts and alternative options found for 71V35761S200PF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 71V35761S200PF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
71V35761S200PFG 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O, TQFP72/Tray Renesas Electronics Corporation 71V35761S200PF vs 71V35761S200PFG
71V35761200PF Cache SRAM, 128KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 Integrated Device Technology Inc 71V35761S200PF vs 71V35761200PF
IDT71V35761200PF Cache SRAM, 128KX36, 3.1ns, CMOS, PQFP100, PLASTIC, TQFP-100 Integrated Device Technology Inc 71V35761S200PF vs IDT71V35761200PF
IDT71V35761S200PF8 Cache SRAM, 128KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 Integrated Device Technology Inc 71V35761S200PF vs IDT71V35761S200PF8
71V35761S200PFG8 TQFP-100, Reel Integrated Device Technology Inc 71V35761S200PF vs 71V35761S200PFG8
71V35761S200PFG8 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O, TQFP0/Reel Renesas Electronics Corporation 71V35761S200PF vs 71V35761S200PFG8
71V35761S200PFG TQFP-100, Tray Integrated Device Technology Inc 71V35761S200PF vs 71V35761S200PFG
Part Number Description Manufacturer Compare
71V35761S200PFG TQFP-100, Tray Integrated Device Technology Inc 71V35761S200PF vs 71V35761S200PFG
71V35761S200PFG8 TQFP-100, Reel Integrated Device Technology Inc 71V35761S200PF vs 71V35761S200PFG8
71V35761S200PFG8 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O, TQFP0/Reel Renesas Electronics Corporation 71V35761S200PF vs 71V35761S200PFG8
71V35761S200PFG 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O, TQFP72/Tray Renesas Electronics Corporation 71V35761S200PF vs 71V35761S200PFG
IDT71V35761S200PF8 Cache SRAM, 128KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 Integrated Device Technology Inc 71V35761S200PF vs IDT71V35761S200PF8

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