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Memory SRAMs 5962-9561312HYA

Memory
5962-9561312HYA
Description: Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, CERAMIC, DIP-32

Overview of 5962-9561312HYA by Microsemi Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
5962-8672601EA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.875 INCH, DIP-16
5962-8672601FA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.375 INCH, FP-16
5962-87518013A Rochester Electronics LLC Interrupt Controller, NMOS, CQCC28, CERAMIC, LCC-28

CAD Models for 5962-9561312HYA by Microsemi Corporation
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Part Data Attributes for 5962-9561312HYA by Microsemi Corporation
Parametric Data

5962-9561312HYA
Microsemi Corporation
Buy Now
-
-
Pbfree Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
MICROSEMI CORP
Part Package Code
DIP
Package Description
DIP,
Pin Count
32
Reach Compliance Code
compliant
ECCN Code
3A001.A.2.C
HTS Code
8542.32.00.41
Access Time-Max
35 ns
JESD-30 Code
R-CDIP-T32
JESD-609 Code
e0
Length
42.2 mm
Memory Density
4194304 bit
Memory IC Type
STANDARD SRAM
Memory Width
8
Number of Functions
1
Number of Terminals
32
Number of Words
524288 words
Number of Words Code
512000
Operating Mode
ASYNCHRONOUS
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Organization
512KX8
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE
Parallel/Serial
PARALLEL
Qualification Status
Not Qualified
Screening Level
MIL-PRF-38534 Class H
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
MILITARY
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
DUAL
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  1. 5962-9561312HYA
    Microsemi Corporation
    Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, CERAMIC, DIP-32
    VS

Alternate Parts for 5962-9561312HYA

This table gives cross-reference parts and alternative options found for 5962-9561312HYA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 5962-9561312HYA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
5962-9561312HYX Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, CERAMIC, DIP-32 Microsemi Corporation 5962-9561312HYA vs 5962-9561312HYX
WMS512K8-35CIA Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 Microsemi Corporation 5962-9561312HYA vs WMS512K8-35CIA
5962-9561307HYX Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, DIP-32 Microsemi Corporation 5962-9561312HYA vs 5962-9561307HYX
5962-9561312HYC Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, CERAMIC, DIP-32 Microsemi Corporation 5962-9561312HYA vs 5962-9561312HYC
WMS512K8-35CMA Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 Microsemi Corporation 5962-9561312HYA vs WMS512K8-35CMA
WMS512K8-35CC Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 Microsemi Corporation 5962-9561312HYA vs WMS512K8-35CC
5962-9560002MXA Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, CERAMIC, DIP-32 Microsemi Corporation 5962-9561312HYA vs 5962-9560002MXA
WMS512K8-35CM Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 Microsemi Corporation 5962-9561312HYA vs WMS512K8-35CM
ACT-S512K8N-035P4Q Cache SRAM, 512KX8, 35ns, CMOS, CDIP32, 1.600 X 0.600 INCH, 0.200 INCH HEIGHT, HERMETIC SEALED, CERAMIC, DIP-32 Cobham Power Products 5962-9561312HYA vs ACT-S512K8N-035P4Q
WMS512K8-35CI Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 Microsemi Corporation 5962-9561312HYA vs WMS512K8-35CI
Part Number Description Manufacturer Compare
WMS512K8-L45CLC 512KX8 STANDARD SRAM, 45ns, CQCC32, BRAZED, CERAMIC, QCC-32 Microsemi Corporation 5962-9561312HYA vs WMS512K8-L45CLC
TC554001AFTI-85L IC 512K X 8 STANDARD SRAM, 85 ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-32, Static RAM Toshiba America Electronic Components 5962-9561312HYA vs TC554001AFTI-85L
WMS512K8-L45FFIA 512KX8 STANDARD SRAM, 45ns, DFP32, CERAMIC,DFP-32 Microsemi Corporation 5962-9561312HYA vs WMS512K8-L45FFIA
WMS512K8-L25DEI 512KX8 STANDARD SRAM, 25ns, CDSO32, CREAMIC, SOJ-32 Microsemi Corporation 5962-9561312HYA vs WMS512K8-L25DEI
UT7Q512-UCA Standard SRAM, 512KX8, 100ns, CMOS, CDFP32, BOTTOM BRAZED, CERAMIC, FP-32 Cobham Semiconductor Solutions 5962-9561312HYA vs UT7Q512-UCA
5962-9561304HTX Standard SRAM, 512KX8, 70ns, CMOS, CDSO32, CERAMIC, SOJ-32 Microsemi Corporation 5962-9561312HYA vs 5962-9561304HTX
WMS512K8-L15CQ 512KX8 STANDARD SRAM, 15ns, CDIP32, 0.600 INCH, BRAZED, CREAMIC, DIP-32 Microsemi Corporation 5962-9561312HYA vs WMS512K8-L15CQ
WMS512K8-L20DECA 512KX8 STANDARD SRAM, 20ns, CDSO32, CREAMIC, SOJ-32 Microsemi Corporation 5962-9561312HYA vs WMS512K8-L20DECA
WMS512K8-100DECEA Standard SRAM, 512KX8, 100ns, CMOS, CDSO32, CERAMIC, SOJ-32 Microsemi Corporation 5962-9561312HYA vs WMS512K8-100DECEA
DPS512S8P-15C SRAM Module, 512KX8, 150ns, CMOS, CDMA32, 0.600 INCH, DIP-32 B&B Electronics Manufacturing Company 5962-9561312HYA vs DPS512S8P-15C

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