Part Details for 5962-9561312HYC by Microsemi Corporation
Overview of 5962-9561312HYC by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 5962-8672601EA | Rochester Electronics LLC | Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.875 INCH, DIP-16 | |
| 5962-8672601FA | Rochester Electronics LLC | Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.375 INCH, FP-16 | |
| 5962-87518013A | Rochester Electronics LLC | Interrupt Controller, NMOS, CQCC28, CERAMIC, LCC-28 |
Part Details for 5962-9561312HYC
5962-9561312HYC CAD Models
5962-9561312HYC Part Data Attributes
|
|
5962-9561312HYC
Microsemi Corporation
Buy Now
|
Compare Parts:
5962-9561312HYC
Microsemi Corporation
Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, CERAMIC, DIP-32
|
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | DIP | |
| Package Description | DIP, | |
| Pin Count | 32 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A001.A.2.C | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 35 ns | |
| JESD-30 Code | R-CDIP-T32 | |
| JESD-609 Code | e4 | |
| Length | 41.525 mm | |
| Memory Density | 4194304 bit | |
| Memory IC Type | STANDARD SRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Terminals | 32 | |
| Number of Words | 524288 words | |
| Number of Words Code | 512000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -55 °C | |
| Organization | 512KX8 | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Code | DIP | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Screening Level | MIL-PRF-38534 Class H | |
| Seated Height-Max | 5.13 mm | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Supply Voltage-Min (Vsup) | 4.5 V | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | MILITARY | |
| Terminal Finish | GOLD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Pitch | 2.54 mm | |
| Terminal Position | DUAL | |
| Width | 15.24 mm |
Alternate Parts for 5962-9561312HYC
This table gives cross-reference parts and alternative options found for 5962-9561312HYC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 5962-9561312HYC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 5962-9561312HYX | Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, CERAMIC, DIP-32 | Microsemi Corporation | 5962-9561312HYC vs 5962-9561312HYX |
| WMS512K8-35CIA | Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | Microsemi Corporation | 5962-9561312HYC vs WMS512K8-35CIA |
| 5962-9561307HYX | Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, DIP-32 | Microsemi Corporation | 5962-9561312HYC vs 5962-9561307HYX |
| WMS512K8-35CMA | Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | Microsemi Corporation | 5962-9561312HYC vs WMS512K8-35CMA |
| WMS512K8-35CC | Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | Microsemi Corporation | 5962-9561312HYC vs WMS512K8-35CC |
| 5962-9560002MXA | Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, CERAMIC, DIP-32 | Microsemi Corporation | 5962-9561312HYC vs 5962-9560002MXA |
| WMS512K8-35CM | Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | Microsemi Corporation | 5962-9561312HYC vs WMS512K8-35CM |
| ACT-S512K8N-035P4Q | Cache SRAM, 512KX8, 35ns, CMOS, CDIP32, 1.600 X 0.600 INCH, 0.200 INCH HEIGHT, HERMETIC SEALED, CERAMIC, DIP-32 | Cobham Power Products | 5962-9561312HYC vs ACT-S512K8N-035P4Q |
| WMS512K8-35CI | Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | Microsemi Corporation | 5962-9561312HYC vs WMS512K8-35CI |
| 5962-9560002MXX | Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, CERAMIC, DIP-32 | Microsemi Corporation | 5962-9561312HYC vs 5962-9560002MXX |