5962-8751309VA by:

Standard SRAM, 1KX4, 45ns, CMOS, CDIP18,

Part Details for 5962-8751309VA by Teledyne e2v

Overview of 5962-8751309VA by Teledyne e2v

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

Part # Manufacturer Description Datasheet
5962-8672601EA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.875 INCH, DIP-16
5962-8672601FA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.375 INCH, FP-16
5962-87518013A Rochester Electronics LLC Interrupt Controller, NMOS, CQCC28, CERAMIC, LCC-28

Price & Stock for 5962-8751309VA

Part # Distributor Description Stock Price Buy
DISTI # CY7C148-45DMB
Avnet Americas STATIC RAM, 1K X 4, 45 NS ACCESS TIME - Rail/Tube (Alt: CY7C148-45DMB) Min Qty: 250 Package Multiple: 1 Container: Tube 0
RFQ
Teledyne e2v STATIC RAM, 1K X 4, 45 NS ACCESS TIME Lead time: 14 Weeks, 0 Days 0
RFQ

Part Details for 5962-8751309VA

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5962-8751309VA Part Data Attributes

5962-8751309VA Teledyne e2v
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5962-8751309VA Teledyne e2v Standard SRAM, 1KX4, 45ns, CMOS, CDIP18,
Part Life Cycle Code Active
Ihs Manufacturer TELEDYNE E2V (UK) LTD
Package Description DIP, DIP18,.3
Reach Compliance Code compliant
ECCN Code 3A001.A.2.C
HTS Code 8542.32.00.41
Access Time-Max 45 ns
I/O Type COMMON
JESD-30 Code R-GDIP-T18
JESD-609 Code e0
Memory Density 4096 bit
Memory IC Type STANDARD SRAM
Memory Width 4
Number of Functions 1
Number of Terminals 18
Number of Words 1024 words
Number of Words Code 1000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Organization 1KX4
Output Characteristics 3-STATE
Package Body Material CERAMIC, GLASS-SEALED
Package Code DIP
Package Equivalence Code DIP18,.3
Package Shape RECTANGULAR
Package Style IN-LINE
Parallel/Serial PARALLEL
Qualification Status Qualified
Screening Level 38535Q/M;38534H;883B
Standby Current-Max 0.01 A
Standby Voltage-Min 4.5 V
Supply Current-Max 0.11 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL

Alternate Parts for 5962-8751309VA

This table gives cross-reference parts and alternative options found for 5962-8751309VA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 5962-8751309VA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
5962-8751309VX Standard SRAM, 1KX4, 45ns, CMOS, CDIP18, CERAMIC, DIP-18 Pyramid Semiconductor Corporation 5962-8751309VA vs 5962-8751309VX
M38510/28902BVA Standard SRAM, 1KX4, 35ns, CMOS, 0.25 X 0.9375 INCH, DIP-18 Teledyne e2v 5962-8751309VA vs M38510/28902BVA
CY7C148-35DMB SRAM Teledyne e2v 5962-8751309VA vs CY7C148-35DMB
AM2148-45PCB Standard SRAM, 1KX4, 45ns, NMOS, PDIP18, PLASTIC, DIP-18 AMD 5962-8751309VA vs AM2148-45PCB
P4C148-35CMB Standard SRAM, 1KX4, 35ns, CMOS, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18 Pyramid Semiconductor Corporation 5962-8751309VA vs P4C148-35CMB
5962-8751306VC 1KX4 STANDARD SRAM, 45ns, CDIP18, 0.300 INCH, CERAMIC, DIP-18 STMicroelectronics 5962-8751309VA vs 5962-8751306VC
CY7C149-35DMB Standard SRAM, 1KX4, 35ns, CMOS, CDIP18, 0.300 INCH, CERDIP-18 Cypress Semiconductor 5962-8751309VA vs CY7C149-35DMB
CY2149-45DC Standard SRAM, 1KX4, 45ns, CMOS, PDIP18, DIP-18 Cypress Semiconductor 5962-8751309VA vs CY2149-45DC
P4C148-35DMB Standard SRAM, 1KX4, 35ns, CMOS, CDIP18, 0.300 INCH, CERDIP-18 Pyramid Semiconductor Corporation 5962-8751309VA vs P4C148-35DMB
5962-8751310VX Standard SRAM, 1KX4, 35ns, CMOS, CDIP18, CERAMIC, DIP-18 Pyramid Semiconductor Corporation 5962-8751309VA vs 5962-8751310VX
Part Number Description Manufacturer Compare
P4C149-25PMB Standard SRAM, 1KX4, 10ns, CMOS, PDIP18, 0.0300 INCH, PLASTIC, DIP-18 Pyramid Semiconductor Corporation 5962-8751309VA vs P4C149-25PMB
M38510/28903BYX Standard SRAM, 4KX1, 55ns, CMOS, FP-18 Cypress Semiconductor 5962-8751309VA vs M38510/28903BYX
P4C147-20LM Standard SRAM, 4KX1, 20ns, CMOS, CQCC18, 0.290 X 0.430 INCH, CERAMIC, LCC-18 Pyramid Semiconductor Corporation 5962-8751309VA vs P4C147-20LM
P4C148-12DC Standard SRAM, 1KX4, 12ns, CMOS, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18 Pyramid Semiconductor Corporation 5962-8751309VA vs P4C148-12DC
P4C148-25LM Standard SRAM, 1KX4, 25ns, CMOS, CQCC18, 0.290 X 0.430 INCH, CERAMIC, LCC-18 Pyramid Semiconductor Corporation 5962-8751309VA vs P4C148-25LM
P4C167-20LMB Standard SRAM, 16KX1, 20ns, CMOS, CQCC20, CERAMIC, LCC-20 Pyramid Semiconductor Corporation 5962-8751309VA vs P4C167-20LMB
P4C149-35CC Standard SRAM, 1KX4, 15ns, CMOS, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18 Pyramid Semiconductor Corporation 5962-8751309VA vs P4C149-35CC
P4C167-15PC Standard SRAM, 16KX1, 15ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20 Pyramid Semiconductor Corporation 5962-8751309VA vs P4C167-15PC
HM1-6514S-9 1KX4 STANDARD SRAM, 120ns, CDIP18, CERAMIC, DIP-18 Intersil Corporation 5962-8751309VA vs HM1-6514S-9
CY7C167A-25VC Standard SRAM, 16KX1, 25ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-20 Cypress Semiconductor 5962-8751309VA vs CY7C167A-25VC

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