Part Details for 5962-8751309VA by Teledyne e2v
Overview of 5962-8751309VA by Teledyne e2v
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
5962-8672601EA | Rochester Electronics LLC | Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.875 INCH, DIP-16 | |
5962-8672601FA | Rochester Electronics LLC | Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.375 INCH, FP-16 | |
5962-87518013A | Rochester Electronics LLC | Interrupt Controller, NMOS, CQCC28, CERAMIC, LCC-28 |
Price & Stock for 5962-8751309VA
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
CY7C148-45DMB
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Avnet Americas | STATIC RAM, 1K X 4, 45 NS ACCESS TIME - Rail/Tube (Alt: CY7C148-45DMB) Min Qty: 250 Package Multiple: 1 Container: Tube | 0 |
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RFQ | |
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Teledyne e2v | STATIC RAM, 1K X 4, 45 NS ACCESS TIME Lead time: 14 Weeks, 0 Days | 0 |
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RFQ |
Part Details for 5962-8751309VA
5962-8751309VA CAD Models
5962-8751309VA Part Data Attributes
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5962-8751309VA
Teledyne e2v
Buy Now
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5962-8751309VA
Teledyne e2v
Standard SRAM, 1KX4, 45ns, CMOS, CDIP18,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TELEDYNE E2V (UK) LTD | |
Package Description | DIP, DIP18,.3 | |
Reach Compliance Code | compliant | |
ECCN Code | 3A001.A.2.C | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 45 ns | |
I/O Type | COMMON | |
JESD-30 Code | R-GDIP-T18 | |
JESD-609 Code | e0 | |
Memory Density | 4096 bit | |
Memory IC Type | STANDARD SRAM | |
Memory Width | 4 | |
Number of Functions | 1 | |
Number of Terminals | 18 | |
Number of Words | 1024 words | |
Number of Words Code | 1000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 125 °C | |
Operating Temperature-Min | -55 °C | |
Organization | 1KX4 | |
Output Characteristics | 3-STATE | |
Package Body Material | CERAMIC, GLASS-SEALED | |
Package Code | DIP | |
Package Equivalence Code | DIP18,.3 | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Parallel/Serial | PARALLEL | |
Qualification Status | Qualified | |
Screening Level | 38535Q/M;38534H;883B | |
Standby Current-Max | 0.01 A | |
Standby Voltage-Min | 4.5 V | |
Supply Current-Max | 0.11 mA | |
Supply Voltage-Max (Vsup) | 5.5 V | |
Supply Voltage-Min (Vsup) | 4.5 V | |
Supply Voltage-Nom (Vsup) | 5 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | MILITARY | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Pitch | 2.54 mm | |
Terminal Position | DUAL |
Alternate Parts for 5962-8751309VA
This table gives cross-reference parts and alternative options found for 5962-8751309VA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 5962-8751309VA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
5962-8751309VX | Standard SRAM, 1KX4, 45ns, CMOS, CDIP18, CERAMIC, DIP-18 | Pyramid Semiconductor Corporation | 5962-8751309VA vs 5962-8751309VX |
M38510/28902BVA | Standard SRAM, 1KX4, 35ns, CMOS, 0.25 X 0.9375 INCH, DIP-18 | Teledyne e2v | 5962-8751309VA vs M38510/28902BVA |
CY7C148-35DMB | SRAM | Teledyne e2v | 5962-8751309VA vs CY7C148-35DMB |
AM2148-45PCB | Standard SRAM, 1KX4, 45ns, NMOS, PDIP18, PLASTIC, DIP-18 | AMD | 5962-8751309VA vs AM2148-45PCB |
P4C148-35CMB | Standard SRAM, 1KX4, 35ns, CMOS, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18 | Pyramid Semiconductor Corporation | 5962-8751309VA vs P4C148-35CMB |
5962-8751306VC | 1KX4 STANDARD SRAM, 45ns, CDIP18, 0.300 INCH, CERAMIC, DIP-18 | STMicroelectronics | 5962-8751309VA vs 5962-8751306VC |
CY7C149-35DMB | Standard SRAM, 1KX4, 35ns, CMOS, CDIP18, 0.300 INCH, CERDIP-18 | Cypress Semiconductor | 5962-8751309VA vs CY7C149-35DMB |
CY2149-45DC | Standard SRAM, 1KX4, 45ns, CMOS, PDIP18, DIP-18 | Cypress Semiconductor | 5962-8751309VA vs CY2149-45DC |
P4C148-35DMB | Standard SRAM, 1KX4, 35ns, CMOS, CDIP18, 0.300 INCH, CERDIP-18 | Pyramid Semiconductor Corporation | 5962-8751309VA vs P4C148-35DMB |
5962-8751310VX | Standard SRAM, 1KX4, 35ns, CMOS, CDIP18, CERAMIC, DIP-18 | Pyramid Semiconductor Corporation | 5962-8751309VA vs 5962-8751310VX |