Datasheets
3N164 by:

Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF, HERMETIC SEALED, TO-72, 4 PIN

Part Details for 3N164 by Vishay Intertechnologies

Overview of 3N164 by Vishay Intertechnologies

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Price & Stock for 3N164

Part # Distributor Description Stock Price Buy
DISTI # 13C2029
Newark Mosfet, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:50Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:2.5V, Power Dissipation:375Mw, Msl:- Rohs Compliant: No |Vishay 3N164 Min Qty: 200 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Onlinecomponents.com Trans MOSFET P-CH 40V 0.05A 4-Pin TO-206AF RoHS: Compliant 323 In Stock
  • 1 $70.5900
  • 100 $21.7200
  • 500 $21.2900
$21.2900 / $70.5900 Buy Now
DISTI # 65023829
Verical Trans MOSFET P-CH 30V 0.05A 4-Pin TO-206AF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Americas - 313
  • 1 $88.5696
  • 100 $47.7282
$47.7282 / $88.5696 Buy Now

Part Details for 3N164

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3N164 Part Data Attributes

3N164 Vishay Intertechnologies
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3N164 Vishay Intertechnologies Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF, HERMETIC SEALED, TO-72, 4 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HERMETIC SEALED, TO-72, 4 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection SUBSTRATE
Configuration SINGLE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 0.05 A
Drain-source On Resistance-Max 300 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.7 pF
JEDEC-95 Code TO-206AF
JESD-30 Code O-MBCY-W4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.375 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 3N164

This table gives cross-reference parts and alternative options found for 3N164. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 3N164, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
3N164 Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4 Calogic Inc 3N164 vs 3N164
3N164 50mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 Texas Instruments 3N164 vs 3N164
3N164 Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF, Temic Semiconductors 3N164 vs 3N164
Part Number Description Manufacturer Compare
3N164 Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4 Calogic Inc 3N164 vs 3N164
3N164 50mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 Texas Instruments 3N164 vs 3N164
3N164 Transistor Vishay Siliconix 3N164 vs 3N164

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