Datasheets
3N80G-TF3-T by: Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 3A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN

Part Details for 3N80G-TF3-T by Unisonic Technologies Co Ltd

Overview of 3N80G-TF3-T by Unisonic Technologies Co Ltd

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Part Details for 3N80G-TF3-T

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3N80G-TF3-T Part Data Attributes:

3N80G-TF3-T Unisonic Technologies Co Ltd
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3N80G-TF3-T Unisonic Technologies Co Ltd Power Field-Effect Transistor, 3A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 170 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 4.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 3N80G-TF3-T

This table gives cross-reference parts and alternative options found for 3N80G-TF3-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 3N80G-TF3-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
3N80G-TF1-T Power Field-Effect Transistor, 3A I(D), 800V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F1, 3 PIN Unisonic Technologies Co Ltd 3N80G-TF3-T vs 3N80G-TF1-T
KF3N80F Power Field-Effect Transistor, 3A I(D), 800V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS, 3 PIN KEC 3N80G-TF3-T vs KF3N80F
3N80L-TF3-T Power Field-Effect Transistor, 3A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Unisonic Technologies Co Ltd 3N80G-TF3-T vs 3N80L-TF3-T
3N80L-TF2-T Power Field-Effect Transistor, 3A I(D), 800V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F2, 3 PIN Unisonic Technologies Co Ltd 3N80G-TF3-T vs 3N80L-TF2-T
AP04N80I-HF TRANSISTOR 3.2 A, 800 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp 3N80G-TF3-T vs AP04N80I-HF
3N80-TF3-T Power Field-Effect Transistor, 3A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Unisonic Technologies Co Ltd 3N80G-TF3-T vs 3N80-TF3-T

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