Part Details for 2SK3322-ZJ by Renesas Electronics Corporation
Overview of 2SK3322-ZJ by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2SK3322-ZJ
2SK3322-ZJ CAD Models
2SK3322-ZJ Part Data Attributes
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2SK3322-ZJ
Renesas Electronics Corporation
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Datasheet
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2SK3322-ZJ
Renesas Electronics Corporation
5.5A, 600V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 10.7 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 2.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 65 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK3322-ZJ
This table gives cross-reference parts and alternative options found for 2SK3322-ZJ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3322-ZJ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFBC40STRL | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | 2SK3322-ZJ vs IRFBC40STRL |
| STB5NB60T4 | 5A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | STMicroelectronics | 2SK3322-ZJ vs STB5NB60T4 |
| STB3NK60ZT4 | N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in D2PAK package | STMicroelectronics | 2SK3322-ZJ vs STB3NK60ZT4 |
| NTB10N60T4 | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | onsemi | 2SK3322-ZJ vs NTB10N60T4 |
| IRFBC20STRL | Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | 2SK3322-ZJ vs IRFBC20STRL |
| FQB10N60C | Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | 2SK3322-ZJ vs FQB10N60C |
| FQB5N60C | Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | 2SK3322-ZJ vs FQB5N60C |
| IRFBC40SPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | 2SK3322-ZJ vs IRFBC40SPBF |
| IRFBC40S | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | 2SK3322-ZJ vs IRFBC40S |
| 2SK3930-01S | Power Field-Effect Transistor, 11A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fuji Electric Co Ltd | 2SK3322-ZJ vs 2SK3930-01S |