Part Details for 2SK2865(TE16L1,NQ) by Toshiba America Electronic Components
Overview of 2SK2865(TE16L1,NQ) by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SK2865(TE16L1,NQ)
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
C1S751200411429
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Chip1Stop | Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) New PW-Mold T/R RoHS: Compliant pbFree: Yes | 3990 |
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$2.9200 / $4.0600 | Buy Now |
Part Details for 2SK2865(TE16L1,NQ)
2SK2865(TE16L1,NQ) CAD Models
2SK2865(TE16L1,NQ) Part Data Attributes
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2SK2865(TE16L1,NQ)
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
2SK2865(TE16L1,NQ)
Toshiba America Electronic Components
MOSFET N-CH 600V 2A SC-64
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | SC-64 | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 93 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 8 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK2865(TE16L1,NQ)
This table gives cross-reference parts and alternative options found for 2SK2865(TE16L1,NQ). The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2865(TE16L1,NQ), but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXTP2N60P | Power Field-Effect Transistor, 2A I(D), 600V, 5.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXYS Corporation | 2SK2865(TE16L1,NQ) vs IXTP2N60P |
2SK2865 |
FETs - Nch 500V
Toshiba America Electronic Components
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2SK2865(TE16L1,NQ) vs 2SK2865
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2N65G-TN3-R | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | 2SK2865(TE16L1,NQ) vs 2N65G-TN3-R |
SSF2N60D1 | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Suzhou Good-Ark Electronics Co Ltd | 2SK2865(TE16L1,NQ) vs SSF2N60D1 |
PJD2N60 | Power Field-Effect Transistor, 2A I(D), 600V, 4.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC PACKAGE-3 | PanJit Semiconductor | 2SK2865(TE16L1,NQ) vs PJD2N60 |
NDD02N60Z-1G | Power MOSFET 600V 2.2A 4.8 Ohm Single N-Channel DPAK, DPAK INSERTION MOUNT, 75-TUBE | onsemi | 2SK2865(TE16L1,NQ) vs NDD02N60Z-1G |
FQD2N60TF_NL | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | 2SK2865(TE16L1,NQ) vs FQD2N60TF_NL |
IXTY2N60P | Power Field-Effect Transistor, 2A I(D), 600V, 5.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | IXYS Corporation | 2SK2865(TE16L1,NQ) vs IXTY2N60P |