There are no models available for this part yet.
Overview of PJD2N60 by PanJit Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 7 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
CAD Models for PJD2N60 by PanJit Semiconductor
Part Data Attributes for PJD2N60 by PanJit Semiconductor
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
PAN JIT INTERNATIONAL INC
|
Part Package Code
|
TO-252
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count
|
4
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
120 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
600 V
|
Drain Current-Max (ID)
|
2 A
|
Drain-source On Resistance-Max
|
4.6 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-252
|
JESD-30 Code
|
R-PSSO-G2
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
8 A
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for PJD2N60
This table gives cross-reference parts and alternative options found for PJD2N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJD2N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTP2N60P | Power Field-Effect Transistor, 2A I(D), 600V, 5.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXYS Corporation | PJD2N60 vs IXTP2N60P |
2SK2865 |
FETs - Nch 500V
Toshiba America Electronic Components
|
PJD2N60 vs 2SK2865
|
|
2N65G-TN3-R | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | PJD2N60 vs 2N65G-TN3-R |
SSF2N60D1 | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Suzhou Good-Ark Electronics Co Ltd | PJD2N60 vs SSF2N60D1 |
NDD02N60Z-1G | Power MOSFET 600V 2.2A 4.8 Ohm Single N-Channel DPAK, DPAK INSERTION MOUNT, 75-TUBE | onsemi | PJD2N60 vs NDD02N60Z-1G |
FQD2N60TF_NL | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | PJD2N60 vs FQD2N60TF_NL |
IXTY2N60P | Power Field-Effect Transistor, 2A I(D), 600V, 5.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | IXYS Corporation | PJD2N60 vs IXTY2N60P |