Part Details for 2SK2257-01 by Fuji Electric Co Ltd
Overview of 2SK2257-01 by Fuji Electric Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SK2257-01
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 500V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 28 |
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$4.6360 / $6.9540 | Buy Now |
Part Details for 2SK2257-01
2SK2257-01 CAD Models
2SK2257-01 Part Data Attributes
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2SK2257-01
Fuji Electric Co Ltd
Buy Now
Datasheet
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Compare Parts:
2SK2257-01
Fuji Electric Co Ltd
Power Field-Effect Transistor, 17A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | COLLMER SEMICONDUCTOR INC | |
Part Package Code | TO-3P | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 150 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 300 ns | |
Turn-on Time-Max (ton) | 150 ns |
Alternate Parts for 2SK2257-01
This table gives cross-reference parts and alternative options found for 2SK2257-01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2257-01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFP451 | Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | 2SK2257-01 vs IRFP451 |
IRFP354 | Power Field-Effect Transistor, 14A I(D), 450V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | 2SK2257-01 vs IRFP354 |
2SK693 | TRANSISTOR 13 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | 2SK2257-01 vs 2SK693 |
IRFP450 | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | 2SK2257-01 vs IRFP450 |
IRFP450LCPBF | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | 2SK2257-01 vs IRFP450LCPBF |
FAP450 | 14A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, TO-3P, 3 PIN | Fuji Electric Co Ltd | 2SK2257-01 vs FAP450 |
IRFP354PBF | Power Field-Effect Transistor, 14A I(D), 450V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | 2SK2257-01 vs IRFP354PBF |
IRFP450 | 14A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | 2SK2257-01 vs IRFP450 |
IRFP450 | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | 2SK2257-01 vs IRFP450 |
IRFP450PBF | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN | International Rectifier | 2SK2257-01 vs IRFP450PBF |