Datasheets
IRFP450 by:

Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Details for IRFP450 by International Rectifier

Overview of IRFP450 by International Rectifier

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Applications Industrial Automation Motor control systems

Price & Stock for IRFP450

Part # Distributor Description Stock Price Buy
Bristol Electronics   255
RFQ
Bristol Electronics   57
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-247 338
  • 1 $17.5725
  • 147 $12.4960
  • 321 $11.7150
$11.7150 / $17.5725 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-247 42
  • 1 $3.2100
  • 4 $2.1400
  • 13 $1.6050
$1.6050 / $3.2100 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-247 14
  • 1 $4.3248
  • 3 $3.6040
  • 8 $3.1715
$3.1715 / $4.3248 Buy Now
ComSIT USA POWER MOSFET Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC RoHS: Not Compliant Stock EU - 34
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 235
  • 1 $4.6200
  • 100 $3.4600
  • 1,000 $3.0000
$3.0000 / $4.6200 Buy Now

Part Details for IRFP450

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IRFP450 Part Data Attributes

IRFP450 International Rectifier
Buy Now Datasheet
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IRFP450 International Rectifier Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 760 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 190 W
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFP450

This table gives cross-reference parts and alternative options found for IRFP450. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP450, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFP450LCPBF Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier IRFP450 vs IRFP450LCPBF
IRFP450LC Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Vishay Siliconix IRFP450 vs IRFP450LC
FAP-450 Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Fuji Electric Co Ltd IRFP450 vs FAP-450
2SK693 TRANSISTOR 13 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components IRFP450 vs 2SK693
IRFP451 Power Field-Effect Transistor, 14A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors IRFP450 vs IRFP451
IRFP450PBF Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN International Rectifier IRFP450 vs IRFP450PBF
MTH13N45 Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC Motorola Semiconductor Products IRFP450 vs MTH13N45
IRFP450 14A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC IRFP450 vs IRFP450
IRFP354PBF Power Field-Effect Transistor, 14A I(D), 450V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier IRFP450 vs IRFP354PBF
2SK678 TRANSISTOR 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components IRFP450 vs 2SK678
Part Number Description Manufacturer Compare
APT4540BN Power Field-Effect Transistor, 16A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Advanced Power Technology IRFP450 vs APT4540BN
2SK2257-01 Power Field-Effect Transistor, 17A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Fuji Electric Co Ltd IRFP450 vs 2SK2257-01
IRFP450LCPBF Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier IRFP450 vs IRFP450LCPBF
IRFP450 14A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC IRFP450 vs IRFP450
IRFP451 14A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC IRFP450 vs IRFP451
IRFP354PBF Power Field-Effect Transistor, 14A I(D), 450V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier IRFP450 vs IRFP354PBF
IRFP451 14A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFP450 vs IRFP451
FAP450 14A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, TO-3P, 3 PIN Fuji Electric Co Ltd IRFP450 vs FAP450
2SK678 TRANSISTOR 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components IRFP450 vs 2SK678
FAP-450 Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Fuji Electric Co Ltd IRFP450 vs FAP-450

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