Datasheets
2SK1157 by:

Power Field-Effect Transistor, 0.8ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220AB

Part Details for 2SK1157 by Hitachi Ltd

Overview of 2SK1157 by Hitachi Ltd

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Part Details for 2SK1157

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2SK1157 Part Data Attributes

2SK1157 Hitachi Ltd
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2SK1157 Hitachi Ltd Power Field-Effect Transistor, 0.8ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer HITACHI LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

Alternate Parts for 2SK1157

This table gives cross-reference parts and alternative options found for 2SK1157. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK1157, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK1157-E Silicon N Channel MOSFET, TO-220AB, /Tube Renesas Electronics Corporation 2SK1157 vs 2SK1157-E
Part Number Description Manufacturer Compare
2SK1157-E Silicon N Channel MOSFET, TO-220AB, /Tube Renesas Electronics Corporation 2SK1157 vs 2SK1157-E

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