There are no models available for this part yet.
Overview of 2N7336 by TT Electronics Power and Hybrid / Semelab Limited
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Audio and Video Systems
CAD Models for 2N7336 by TT Electronics Power and Hybrid / Semelab Limited
Part Data Attributes for 2N7336 by TT Electronics Power and Hybrid / Semelab Limited
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|---|---|
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Pbfree Code
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No
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Rohs Code
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No
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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SEMELAB LTD
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Part Package Code
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DIP
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Package Description
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IN-LINE, R-CDIP-T14
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Pin Count
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14
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Additional Feature
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AVALANCHE RATED
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Avalanche Energy Rating (Eas)
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75 mJ
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Configuration
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SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
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1 A
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Drain-source On Resistance-Max
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0.8 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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R-CDIP-T14
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Number of Elements
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4
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Number of Terminals
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14
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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CERAMIC, METAL-SEALED COFIRED
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Package Shape
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RECTANGULAR
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Package Style
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IN-LINE
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL AND P-CHANNEL
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Pulsed Drain Current-Max (IDM)
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4 A
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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DUAL
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Element Material
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SILICON
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Alternate Parts for 2N7336
This table gives cross-reference parts and alternative options found for 2N7336. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7336, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFG6110-JQR-B | 1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14 | TT Electronics Power and Hybrid / Semelab Limited | 2N7336 vs IRFG6110-JQR-B |
| IRFG6110R1 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | 2N7336 vs IRFG6110R1 |
| JANTX2N7336 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN | Infineon Technologies AG | 2N7336 vs JANTX2N7336 |
| IRFG6110-JQR-B | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | 2N7336 vs IRFG6110-JQR-B |
| 2N7336-QR-B | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | 2N7336 vs 2N7336-QR-B |
| IRFG6110-JQR-BR1 | 1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14 | TT Electronics Power and Hybrid / Semelab Limited | 2N7336 vs IRFG6110-JQR-BR1 |
| 2N7336PBF | Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB | International Rectifier | 2N7336 vs 2N7336PBF |
| 2N7336-QR-BR1 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | 2N7336 vs 2N7336-QR-BR1 |
| IRFG6110 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | 2N7336 vs IRFG6110 |
| IRFG6110 | 1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14 | TT Electronics Power and Hybrid / Semelab Limited | 2N7336 vs IRFG6110 |