2N7336
vs
IRFG6110R1
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
SEMELAB LTD
|
TT ELECTRONICS PLC
|
Part Package Code |
DIP
|
|
Package Description |
IN-LINE, R-CDIP-T14
|
IN-LINE, R-CDIP-T14
|
Pin Count |
14
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
75 mJ
|
75 mJ
|
Configuration |
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
1 A
|
1 A
|
Drain-source On Resistance-Max |
0.8 Ω
|
0.8 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CDIP-T14
|
R-CDIP-T14
|
Number of Elements |
4
|
4
|
Number of Terminals |
14
|
14
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL AND P-CHANNEL
|
N-CHANNEL AND P-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
4 A
|
4 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
5
|
1
|
JESD-609 Code |
|
e1
|
Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
Compare 2N7336 with alternatives
Compare IRFG6110R1 with alternatives