Datasheets
2N6756 by:

14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Part Details for 2N6756 by Motorola Mobility LLC

Overview of 2N6756 by Motorola Mobility LLC

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Applications Industrial Automation Motor control systems

Part Details for 2N6756

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2N6756 Part Data Attributes:

2N6756 Motorola Mobility LLC
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2N6756 Motorola Mobility LLC 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 150 pF
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 85 ns
Turn-on Time-Max (ton) 105 ns

Alternate Parts for 2N6756

This table gives cross-reference parts and alternative options found for 2N6756. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6756, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JANTX2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, Microsemi Corporation 2N6756 vs JANTX2N6756
2N6756 14A, 100V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited 2N6756 vs 2N6756
IRF130 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC 2N6756 vs IRF130
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) 2N6756 vs JANTXV2N6756
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products 2N6756 vs JANTXV2N6756
JANHCA2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG 2N6756 vs JANHCA2N6756
IRF133 Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier 2N6756 vs IRF133
IRF130 Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor 2N6756 vs IRF130
JANTX2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products 2N6756 vs JANTX2N6756
JAN2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation 2N6756 vs JAN2N6756
Part Number Description Manufacturer Compare
IRF141 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC 2N6756 vs IRF141
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) 2N6756 vs 2N6758
RFM12N08 12A, 80V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation 2N6756 vs RFM12N08
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products 2N6756 vs JANTXV2N6756
JANHCA2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG 2N6756 vs JANHCA2N6756
IRF131R Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor 2N6756 vs IRF131R
IRF142R 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation 2N6756 vs IRF142R
IRF233 Power Field-Effect Transistor, 8A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor 2N6756 vs IRF233
2N6758 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC 2N6756 vs 2N6758
JAN2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation 2N6756 vs JAN2N6758

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