Part Details for 2N6661 by Supertex Inc
Overview of 2N6661 by Supertex Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2N6661
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, N-Channel, TO-39 | 39 |
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$29.7000 / $32.1750 | Buy Now |
Part Details for 2N6661
2N6661 CAD Models
2N6661 Part Data Attributes:
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2N6661
Supertex Inc
Buy Now
Datasheet
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Compare Parts:
2N6661
Supertex Inc
Small Signal Field-Effect Transistor, 0.35A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SUPERTEX INC | |
| Part Package Code | TO-39 | |
| Package Description | TO-39, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH INPUT IMPEDANCE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 90 V | |
| Drain Current-Max (ID) | 0.35 A | |
| Drain-source On Resistance-Max | 4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JEDEC-95 Code | TO-39 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e4 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 6.25 W | |
| Power Dissipation-Max (Abs) | 6.25 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | GOLD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N6661
This table gives cross-reference parts and alternative options found for 2N6661. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6661, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SXV2N6661 | Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | Supertex Inc | 2N6661 vs SXV2N6661 |
| 2N6661R1 | 900mA, 90V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6661 vs 2N6661R1 |
| 2N6661-E3 | Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, LEAD FREE, TO-39 TOLL LID, 3 PIN | Vishay Intertechnologies | 2N6661 vs 2N6661-E3 |
| 2N6661 | 900mA, 90V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6661 vs 2N6661 |
| 2N6661.MOD | Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | 2N6661 vs 2N6661.MOD |
| 2N6661-JQR-BR1 | Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN | TT Electronics Resistors | 2N6661 vs 2N6661-JQR-BR1 |
| 2N6661-JQR-AE4 | Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN | TT Electronics Resistors | 2N6661 vs 2N6661-JQR-AE4 |
| JAN2N6661 | Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN | Vishay Intertechnologies | 2N6661 vs JAN2N6661 |
| 2N6661-JQR-B | 900mA, 90V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6661 vs 2N6661-JQR-B |
| 2N6661.MODR1 | 900mA, 90V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6661 vs 2N6661.MODR1 |