Part Details for 2N6483 by Calogic Inc
Overview of 2N6483 by Calogic Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for 2N6483
| Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 | 0 |
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$8.3700 | Buy Now |
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NAC | RoHS: Compliant Min Qty: 1000 Package Multiple: 1 | 0 |
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$6.8000 / $7.7300 | Buy Now |
Part Details for 2N6483
2N6483 CAD Models
2N6483 Part Data Attributes:
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2N6483
Calogic Inc
Buy Now
Datasheet
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Compare Parts:
2N6483
Calogic Inc
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CALOGIC LLC | |
| Package Description | CYLINDRICAL, O-MBCY-W6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | LOW NOISE | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| FET Technology | JUNCTION | |
| Feedback Cap-Max (Crss) | 3.5 pF | |
| JEDEC-95 Code | TO-71 | |
| JESD-30 Code | O-MBCY-W6 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N6483
This table gives cross-reference parts and alternative options found for 2N6483. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6483, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI4922BDY-T1-E3 | Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Vishay Siliconix | 2N6483 vs SI4922BDY-T1-E3 |
| NDH8301N/D84Z | 3000mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | 2N6483 vs NDH8301N/D84Z |
| SDF506 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | 2N6483 vs SDF506 |
| FDC634PD87Z | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | 2N6483 vs FDC634PD87Z |
| SI4922DY-T1-E3 | Small Signal Field-Effect Transistor, 6.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Vishay Siliconix | 2N6483 vs SI4922DY-T1-E3 |
| SI3459BDV-T1-E3 | TRANSISTOR 2.2 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal | Vishay Siliconix | 2N6483 vs SI3459BDV-T1-E3 |
| NDS9925A/L86Z | 4500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | 2N6483 vs NDS9925A/L86Z |
| BSD235NL6327 | Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6 | Infineon Technologies AG | 2N6483 vs BSD235NL6327 |
| SI3441DVS62Z | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | 2N6483 vs SI3441DVS62Z |
| FDC655ANS62Z | Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | 2N6483 vs FDC655ANS62Z |