2N6483
vs
SI3459BDV-T1-E3
feature comparison
| Pbfree Code |
No
|
Yes
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
CALOGIC LLC
|
VISHAY SILICONIX
|
| Package Description |
CYLINDRICAL, O-MBCY-W6
|
SMALL OUTLINE, R-PDSO-G6
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Additional Feature |
LOW NOISE
|
|
| Configuration |
SEPARATE, 2 ELEMENTS
|
SINGLE WITH BUILT-IN DIODE
|
| FET Technology |
JUNCTION
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
3.5 pF
|
30 pF
|
| JEDEC-95 Code |
TO-71
|
MO-193AA
|
| JESD-30 Code |
O-MBCY-W6
|
R-PDSO-G6
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
6
|
6
|
| Operating Mode |
DEPLETION MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.5 W
|
3.3 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN LEAD
|
Matte Tin (Sn)
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
TSOP
|
| Pin Count |
|
6
|
| Samacsys Manufacturer |
|
Vishay
|
| DS Breakdown Voltage-Min |
|
60 V
|
| Drain Current-Max (ID) |
|
0.0022 A
|
| Drain-source On Resistance-Max |
|
0.216 Ω
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare 2N6483 with alternatives
Compare SI3459BDV-T1-E3 with alternatives