Part Details for 2MBI100L-120 by Fuji Electric Co Ltd
Overview of 2MBI100L-120 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2MBI100L-120
2MBI100L-120 CAD Models
2MBI100L-120 Part Data Attributes:
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2MBI100L-120
Fuji Electric Co Ltd
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Datasheet
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2MBI100L-120
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, M215, 7 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | COLLMER SEMICONDUCTOR INC | |
Package Description | FLANGE MOUNT, R-PUFM-X7 | |
Pin Count | 7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW SATURATION VOLTAGE, HIGH SWITCHING SPEED | |
Collector Current-Max (IC) | 100 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
JESD-30 Code | R-PUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 800 ns | |
Turn-on Time-Nom (ton) | 600 ns |
Alternate Parts for 2MBI100L-120
This table gives cross-reference parts and alternative options found for 2MBI100L-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2MBI100L-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2MBI200SB-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | 2MBI100L-120 vs 2MBI200SB-120 |
CM300DY-24A | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Mitsubishi Electric | 2MBI100L-120 vs CM300DY-24A |
MG150Q2YS91 | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI100L-120 vs MG150Q2YS91 |
1MBI300N-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN | Fuji Electric Co Ltd | 2MBI100L-120 vs 1MBI300N-120 |
MG150Q2YS11 | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI100L-120 vs MG150Q2YS11 |
MBM150GS12A | 150A, 1200V, N-CHANNEL IGBT, MODULE | Renesas Electronics Corporation | 2MBI100L-120 vs MBM150GS12A |
MG100Q2YS11 | TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI100L-120 vs MG100Q2YS11 |
MG300Q2YS61 | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI100L-120 vs MG300Q2YS61 |
MG600Q1US51 | TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F3A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI100L-120 vs MG600Q1US51 |
2MBI150VB-120-50 | Insulated Gate Bipolar Transistor | Fuji Electric Co Ltd | 2MBI100L-120 vs 2MBI150VB-120-50 |