Datasheets
2MBI100L-120 by: Fuji Electric Co Ltd

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, M215, 7 PIN

Part Details for 2MBI100L-120 by Fuji Electric Co Ltd

Overview of 2MBI100L-120 by Fuji Electric Co Ltd

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Part Details for 2MBI100L-120

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2MBI100L-120 Part Data Attributes:

2MBI100L-120 Fuji Electric Co Ltd
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2MBI100L-120 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, M215, 7 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer COLLMER SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-PUFM-X7
Pin Count 7
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW SATURATION VOLTAGE, HIGH SWITCHING SPEED
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-PUFM-X7
Number of Elements 2
Number of Terminals 7
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 800 ns
Turn-on Time-Nom (ton) 600 ns

Alternate Parts for 2MBI100L-120

This table gives cross-reference parts and alternative options found for 2MBI100L-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2MBI100L-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2MBI200SB-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Fuji Electric Co Ltd 2MBI100L-120 vs 2MBI200SB-120
CM300DY-24A Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Mitsubishi Electric 2MBI100L-120 vs CM300DY-24A
MG150Q2YS91 TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI100L-120 vs MG150Q2YS91
1MBI300N-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN Fuji Electric Co Ltd 2MBI100L-120 vs 1MBI300N-120
MG150Q2YS11 TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI100L-120 vs MG150Q2YS11
MBM150GS12A 150A, 1200V, N-CHANNEL IGBT, MODULE Renesas Electronics Corporation 2MBI100L-120 vs MBM150GS12A
MG100Q2YS11 TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI100L-120 vs MG100Q2YS11
MG300Q2YS61 TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI100L-120 vs MG300Q2YS61
MG600Q1US51 TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F3A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI100L-120 vs MG600Q1US51
2MBI150VB-120-50 Insulated Gate Bipolar Transistor Fuji Electric Co Ltd 2MBI100L-120 vs 2MBI150VB-120-50

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