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Transistors / IGBTs / MG150Q2YS11
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MG150Q2YS11 by: Toshiba America Electronic Components

TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

Part Details for MG150Q2YS11 by Toshiba America Electronic Components

Overview of MG150Q2YS11 by Toshiba America Electronic Components

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for MG150Q2YS11

Part # Distributor Description Stock Price Buy
Quest Components 150 A, 1200 V, N-CHANNEL IGBT 2
  • 1 $375.4228
$375.4228 Buy Now

Part Details for MG150Q2YS11

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MG150Q2YS11 Part Data Attributes:

Parametric Data
MG150Q2YS11 Toshiba America Electronic Components
Buy Now Datasheet
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MG150Q2YS11 Toshiba America Electronic Components TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 150 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf) 1000 ns
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1100 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
VCEsat-Max 2.7 V

Alternate Parts for MG150Q2YS11

This table gives cross-reference parts and alternative options found for MG150Q2YS11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG150Q2YS11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM100GB120DN2 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN Infineon Technologies AG MG150Q2YS11 vs BSM100GB120DN2
CM150DY-24T Insulated Gate Bipolar Transistor, Mitsubishi Electric MG150Q2YS11 vs CM150DY-24T
1MBI200SA-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel Fuji Electric Co Ltd MG150Q2YS11 vs 1MBI200SA-120
MG600Q1US59A Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Mitsubishi Electric MG150Q2YS11 vs MG600Q1US59A
MG600Q1US65H TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F1A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components MG150Q2YS11 vs MG600Q1US65H
2MBI150SC-120 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN Fuji Electric Co Ltd MG150Q2YS11 vs 2MBI150SC-120
MII150-12A4 Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Littelfuse Inc MG150Q2YS11 vs MII150-12A4
MG100Q2YS50A TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components MG150Q2YS11 vs MG100Q2YS50A
APTGT200U120D4 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 Microsemi Corporation MG150Q2YS11 vs APTGT200U120D4
FZ400R12KS4 Insulated Gate Bipolar Transistor, 510A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG MG150Q2YS11 vs FZ400R12KS4

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