There are no models available for this part yet.
Overview of 2N6764E3 by Microsemi Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for 2N6764E3 by Microsemi Corporation
Part Data Attributes for 2N6764E3 by Microsemi Corporation
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|---|---|
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Rohs Code
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Yes
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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MICROSEMI CORP
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Package Description
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FLANGE MOUNT, O-MBFM-P2
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Additional Feature
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HIGH RELIABILITY
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
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38 A
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Drain-source On Resistance-Max
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0.065 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-204AE
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JESD-30 Code
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O-MBFM-P2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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METAL
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Package Shape
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ROUND
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Package Style
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FLANGE MOUNT
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
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152 A
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Surface Mount
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NO
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Terminal Form
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PIN/PEG
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Terminal Position
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BOTTOM
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for 2N6764E3
This table gives cross-reference parts and alternative options found for 2N6764E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6764E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN | Microsemi Corporation | 2N6764E3 vs 2N6764 |
| IRF150-JQR-BR1 | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6764E3 vs IRF150-JQR-BR1 |
| JANTX2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | Omnirel Corp | 2N6764E3 vs JANTX2N6764 |
| IRF150R1 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | TT Electronics Resistors | 2N6764E3 vs IRF150R1 |
| JANTXV2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | 2N6764E3 vs JANTXV2N6764 |
| JANTX2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | 2N6764E3 vs JANTX2N6764 |
| IRF150-JQR-BR1 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | TT Electronics Resistors | 2N6764E3 vs IRF150-JQR-BR1 |
| 2N6764-QR-BR1 | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6764E3 vs 2N6764-QR-BR1 |
| IRF152 | Power Field-Effect Transistor, 33A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | Fairchild Semiconductor Corporation | 2N6764E3 vs IRF152 |
| 2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | Fairchild Semiconductor Corporation | 2N6764E3 vs 2N6764 |