There are no models available for this part yet.
Overview of 2N6756 by New England Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Motor control systems
CAD Models for 2N6756 by New England Semiconductor
Part Data Attributes for 2N6756 by New England Semiconductor
|
2N6756
New England Semiconductor
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
NEW ENGLAND SEMICONDUCTOR
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Configuration
|
SINGLE
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|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
75 W
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Want to compare parts?
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2N6756New England SemiconductorPower Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET,VS
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Alternate Parts for 2N6756
This table gives cross-reference parts and alternative options found for 2N6756. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6756, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF132 | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,12A I(D),TO-204AA | National Semiconductor Corporation | 2N6756 vs IRF132 |
| IRF131 | IRF131 | Texas Instruments | 2N6756 vs IRF131 |
| IRF130 | IRF130, TO3-3 | New England Semiconductor | 2N6756 vs IRF130 |
| 2N6756 | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,TO-3 | National Semiconductor Corporation | 2N6756 vs 2N6756 |
| IRF130 | IRF130 | Advanced Semiconductor Inc | 2N6756 vs IRF130 |
| IRF131 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Samsung Semiconductor | 2N6756 vs IRF131 |
| IRF130 | IRF130 | Texas Instruments | 2N6756 vs IRF130 |
| IRF132 | IRF132 | Texas Instruments | 2N6756 vs IRF132 |
| IRF130 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | 2N6756 vs IRF130 |
| IRF130 | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,14A I(D),TO-204AA | National Semiconductor Corporation | 2N6756 vs IRF130 |