Part Details for 2N6083 by Microsemi Corporation
Overview of 2N6083 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2N6083
2N6083 CAD Models
2N6083 Part Data Attributes:
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2N6083
Microsemi Corporation
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Datasheet
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2N6083
Microsemi Corporation
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | POST/STUD MOUNT, O-XRPM-F4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS | |
Collector Current-Max (IC) | 4 A | |
Collector-Base Capacitance-Max | 130 pF | |
Collector-Emitter Voltage-Max | 18 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 5 | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | O-XRPM-F4 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | ROUND | |
Package Style | POST/STUD MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 65 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 200 MHz |
Alternate Parts for 2N6083
This table gives cross-reference parts and alternative options found for 2N6083. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6083, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MS1337 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, PLASTIC, M113, 4 PIN | Microsemi Corporation | 2N6083 vs MS1337 |
2N6166 | VHF BAND, Si, NPN, RF POWER TRANSISTOR | Motorola Mobility LLC | 2N6083 vs 2N6166 |
VHB10-12F | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 | Advanced Semiconductor Inc | 2N6083 vs VHB10-12F |
TVU014 | RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN, | Advanced Semiconductor Inc | 2N6083 vs TVU014 |
MS1579 | RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN | Microchip Technology Inc | 2N6083 vs MS1579 |
MRF314A | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, | MACOM | 2N6083 vs MRF314A |
BLV11 | RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.375 INCH, FM-4 | Advanced Semiconductor Inc | 2N6083 vs BLV11 |
MRF314A | VHF BAND, Si, NPN, RF POWER TRANSISTOR | Motorola Mobility LLC | 2N6083 vs MRF314A |
BLV20 | TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-123A, 4 PIN, BIP RF Power | NXP Semiconductors | 2N6083 vs BLV20 |
MRF654 | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, | Advanced Semiconductor Inc | 2N6083 vs MRF654 |