Datasheets
2N3583 by:

Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

Part Details for 2N3583 by Space Power Electronics Inc

Overview of 2N3583 by Space Power Electronics Inc

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Part Details for 2N3583

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2N3583 Part Data Attributes

2N3583 Space Power Electronics Inc
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2N3583 Space Power Electronics Inc Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SPACE POWER ELECTRONICS INC
Part Package Code TO-66
Package Description TO-66, 2 PIN
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 175 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JEDEC-95 Code TO-66
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 35 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 10 MHz

Alternate Parts for 2N3583

This table gives cross-reference parts and alternative options found for 2N3583. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3583, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N3583 Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, Microsemi Corporation 2N3583 vs 2N3583
2N3583.MOD Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN TT Electronics Resistors 2N3583 vs 2N3583.MOD
2N3583.MODR1 Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN TT Electronics Resistors 2N3583 vs 2N3583.MODR1
2N3583 Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN Central Semiconductor Corp 2N3583 vs 2N3583
2N3583.MODR1 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN TT Electronics Power and Hybrid / Semelab Limited 2N3583 vs 2N3583.MODR1
2N3583R1 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN TT Electronics Power and Hybrid / Semelab Limited 2N3583 vs 2N3583R1
2N3583 Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN Mospec Semiconductor Corp 2N3583 vs 2N3583
2N3583 Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN Solitron Devices Inc 2N3583 vs 2N3583
2N3583 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-66 Texas Instruments 2N3583 vs 2N3583
2N3583 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN TT Electronics Power and Hybrid / Semelab Limited 2N3583 vs 2N3583
Part Number Description Manufacturer Compare
2N6671E3 Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2 Microsemi Corporation 2N3583 vs 2N6671E3
2N6317 7A, 60V, PNP, Si, POWER TRANSISTOR, TO-213AA Motorola Mobility LLC 2N3583 vs 2N6317
2N1487 Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-3VAR, 2 PIN Space Power Electronics Inc 2N3583 vs 2N1487
2N3583 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN TT Electronics Power and Hybrid / Semelab Limited 2N3583 vs 2N3583
2N3583 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-66 Texas Instruments 2N3583 vs 2N3583
2N5877 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors 2N3583 vs 2N5877
2N6275 Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN Space Power Electronics Inc 2N3583 vs 2N6275
2N6374.M0D 6A, 50V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN TT Electronics Power and Hybrid / Semelab Limited 2N3583 vs 2N6374.M0D
JANTXV2N6650 Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN Harris Semiconductor 2N3583 vs JANTXV2N6650
2N5878 Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin Microchip Technology Inc 2N3583 vs 2N5878

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